All Transistors. HSD313 Datasheet

 

HSD313 Datasheet, Equivalent, Cross Reference Search

Type Designator: HSD313

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-220AB

HSD313 Transistor Equivalent Substitute - Cross-Reference Search

 

HSD313 Datasheet (PDF)

1.1. hsd313.pdf Size:52K _hsmc

HSD313
HSD313

Spec. No. : HE6728 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HSD313 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD313 is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ......................................

Datasheet: HSB857 , HSB857D , HSB857J , HSC1815 , HSC945 , HSD1609 , HSD1609S , HSD1616A , BU808DFI , HSD468 , HSD667A , HSD669A , HSD669AT , HSD879 , HSD882 , HSD882S , HSD965 .

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