All Transistors. 2SC5243 Datasheet

 

2SC5243 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5243

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector-Emitter Voltage |Vce|: 1700 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TOP-3L

2SC5243 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5243 Datasheet (PDF)

1.1. 2sc5243.pdf Size:46K _panasonic

2SC5243
2SC5243

Power Transistors 2SC5243 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ? 3.3± 0.2 20.0± 0.5 5.0± 0.3 3.0 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 1.5 Wide area of safe operation (ASO) 1.5 2.0± 0.3 2.7± 0.3 3.0± 0.3 Absolute Maximum Ratings (TC=25?C) 1.0± 0.2 Param

4.1. 2sc5245a-4-tl-e.pdf Size:236K _update

2SC5243
2SC5243

Ordering number : ENA1074A 2SC5245A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain ⏐ ⏐2 : S21e =10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz) ⏐ ⏐

4.2. 2sc5242.pdf Size:122K _toshiba

2SC5243
2SC5243

2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: V = 230 V (min) CEO • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter vol

4.3. 2sc5245a.pdf Size:270K _sanyo

2SC5243
2SC5243

Ordering number : ENA1074 2SC5245A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5245A OSC Applications Features • Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : ?S21e?2=10dB typ (f=1.5GHz). • High cut-off frequency : fT=8GHz typ. • Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5G

4.4. 2sc5245.pdf Size:155K _sanyo

2SC5243
2SC5243

Ordering number:EN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions · Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2059B 2 · High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5245] · High cutoff frequency : fT=11GHz typ. 0.3 · Low-voltage, low-current operation 0.15 3 (VCE

4.5. 2sc5242 fja4313.pdf Size:468K _fairchild_semi

2SC5243
2SC5243

January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A TO-3P 1 • High Power Dissipation : 130watts 1.Base 2.Collector 3.Emitter • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity f

4.6. 2sa1964 2sc5248.pdf Size:38K _rohm

2SC5243

2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282

4.7. 2sc5244.pdf Size:36K _panasonic

2SC5243
2SC5243

Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ? 3.3± 0.2 20.0± 0.5 5.0± 0.3 3.0 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 1.5 Wide area of safe operation (ASO) 1.5 2.0± 0.3 2.7± 0.3 3.0± 0.3 Absolute Maximum Ratings (TC=25?C) 1.0±

4.8. 2sc5247.pdf Size:64K _hitachi

2SC5243
2SC5243

2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltag

4.9. 2sc5246.pdf Size:64K _hitachi

2SC5243
2SC5243

2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltag

4.10. 2sc5249.pdf Size:24K _sanken-ele

2SC5243

2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) 2SC5249 Symbol 2SC5249 Symbol Conditions Unit Unit ±0.2 4.2 ±0.2 10.1 c0.5 2.8 100max VCBO 600 ICBO VCB=600V µ A V 100max VCEO 600 I

4.11. 2sc5249.pdf Size:223K _inchange_semiconductor

2SC5243
2SC5243

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector

4.12. 2sc5242.pdf Size:237K _inchange_semiconductor

2SC5243
2SC5243

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?)

4.13. 2sc5248.pdf Size:264K _inchange_semiconductor

2SC5243
2SC5243

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

4.14. 2sc5241.pdf Size:84K _inchange_semiconductor

2SC5243
2SC5243

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5241 DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMET

Datasheet: 2SC5225 , 2SC5226 , 2SC5227 , 2SC5228 , 2SC5229 , 2SC5230 , 2SC5231 , 2SC5238 , A733 , 2SC5244 , 2SC5244A , 2SC5245 , 2SC5246 , 2SC5247 , 2SC5252 , 2SC5254 , 2SC5255 .

 


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