All Transistors. 2SC5553 Datasheet

 

2SC5553 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5553

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 22 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TOP-3E

2SC5553 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5553 Datasheet (PDF)

1.1. 2sc5553.pdf Size:55K _panasonic

2SC5553
2SC5553

Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.00.2 Wide area of safe operation (ASO) 1.10.1 0.70.1 Absolute Maximum Ratings TC = 25C 5.

4.1. 2sc5551ae-td-e.pdf Size:185K _update

2SC5553
2SC5553

Ordering number : ENA1118A 2SC5551A RF Transistor http://onsemi.com 30V, 300mA, fT=3.5GHz, NPN Single PCP Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Volta

4.2. 2sc5551af-td-e.pdf Size:185K _update

2SC5553
2SC5553

Ordering number : ENA1118A 2SC5551A RF Transistor http://onsemi.com 30V, 300mA, fT=3.5GHz, NPN Single PCP Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Volta

4.3. 2sc5550.pdf Size:208K _toshiba

2SC5553
2SC5553

4.4. 2sc5551a.pdf Size:287K _sanyo

2SC5553
2SC5553

Ordering number : ENA1118 2SC5551A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output 2SC5551A Amplifier Applications Features High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max). Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collec

4.5. 2sc5551.pdf Size:43K _sanyo

2SC5553
2SC5553

Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions High fT : (fT=3.5GHz typ). unit:mm Large current : (IC=300mA). 2038A Large allowable collector dissipation (1.3W max). [2SC5551] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO :

4.6. 2sc5556.pdf Size:65K _panasonic

2SC5553
2SC5553

Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolu

4.7. 2sc5552.pdf Size:46K _panasonic

2SC5553

Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.00.2 Wide area of safe operation (ASO) 1.10.1 0.70.1 Absolute Maximum Ratings TC = 25C 5.

4.8. 2sc5555.pdf Size:46K _hitachi

2SC5553
2SC5553

2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 ? 0.8 ? 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is ZD-. 2SC5555 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO

4.9. 2sc5554.pdf Size:49K _hitachi

2SC5553
2SC5553

2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 (Z) 1st. Edition Oct. 1998 Features Super compact package; (1.4 ? 0.8 ? 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YH-. 2SC5554 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO

Datasheet: 2SC5540 , 2SC5541 , 2SC5543 , 2SC5544 , 2SC5545 , 2SC5546 , 2SC5551 , 2SC5552 , S9018 , 2SC5554 , 2SC5555 , 2SC5556 , 2SC5570 , 2SC5572 , 2SC5577 , 2SC5578 , 2SC5580 .

 


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