All Transistors. TN5415A Datasheet

 

TN5415A Datasheet, Equivalent, Cross Reference Search

Type Designator: TN5415A

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO-226

TN5415A Transistor Equivalent Substitute - Cross-Reference Search

 

TN5415A Datasheet (PDF)

1.1. tn5415a.pdf Size:25K _fairchild_semi

TN5415A
TN5415A

Discrete POWER & Signal Technologies TN5415A TO-226 C B E PNP High Voltage Amplifier This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 200 V V Collector-Base Voltag

Datasheet: SJ5436 , SJ5437 , SJ5439 , STS8550 , TN3019A , TN3440A , TN4033A , TN5320A , BU508 , TN6705A , TN6707A , TN6716A , TN6718A , TN6719A , TN6725A , TN6727A , ZTX749A .

 


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