STC4350F Datasheet, Equivalent, Cross Reference Search
Type Designator: STC4350F
SMD Transistor Code: HW8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 210 MHz
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-89
STC4350F Transistor Equivalent Substitute - Cross-Reference Search
STC4350F Datasheet (PDF)
stc4350f.pdf
STC4350FNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application Features Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia
stc4350q.pdf
STC4350QNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application CCFeatures BB High collector breakdown voltage C: VCEO = 50V EE Low collector saturation voltage : VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device
stc4301d.pdf
STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
