STC4350F Specs and Replacement
Type Designator: STC4350F
SMD Transistor Code: HW8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 210 MHz
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-89
STC4350F Substitution
STC4350F detailed specifications
stc4350f.pdf
STC4350F NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application Features Low saturation voltage VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia... See More ⇒
stc4350q.pdf
STC4350Q NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application C C Features B B High collector breakdown voltage C VCEO = 50V E E Low collector saturation voltage VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device ... See More ⇒
stc4301d.pdf
STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati... See More ⇒
Detailed specifications: STC403Q , STC405 , STC405D , STC4073D , STC4073F , STC4073Q , STC4250F , STC4250L , 2SC5198 , STC4350Q , STC503D , STC503F , STC601F , STC603PI , STC6075Q , STC722D , STD13003D .
Keywords - STC4350F transistor specs
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