2N636 PDF Specs and Replacement
Type Designator: 2N636
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO5
2N636 Substitution
2N636 PDF detailed specifications
2n6360.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒
2n6360.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒
Detailed specifications: 2N6354 , 2N6354A , 2N6355 , 2N6356 , 2N6357 , 2N6358 , 2N6359 , 2N635A , A733 , 2N6360 , 2N6361 , 2N6362 , 2N6363 , 2N6364 , 2N6365 , 2N6365A , 2N6366 .
Keywords - 2N636 pdf specs
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