2N636 Datasheet and Replacement
Type Designator: 2N636
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO5
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2N636 Datasheet (PDF)
2n6360.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION1 Base 2 Emit
2n6360.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KT602G | 2N4432 | 2SD1046 | 2SD1536M | MJE703 | MJE13002I5 | MD3725F
Keywords - 2N636 transistor datasheet
2N636 cross reference
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History: KT602G | 2N4432 | 2SD1046 | 2SD1536M | MJE703 | MJE13002I5 | MD3725F



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