STS1979 Specs and Replacement
Type Designator: STS1979
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO-92
STS1979 Substitution
STS1979 detailed specifications
sts1979.pdf
STS1979 Semiconductor Semiconductor PNP Silicon Transistor Description Medium power amplifier Features Large collector current ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with STS5342 Ordering Information Type NO. Marking Package Code STS1979 STS1979 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5... See More ⇒
sts19n3llh6.pdf
STS19N3LLH6 N-channel 30 V, 0.0049 , 19 A, SO-8 STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max 5 6 7 8 STS19N3LLH6 30 V 0.0056 19 A RDS(on) * Qg industry benchmark 4 3 2 Extremely low on-resistance RDS(on) 1 High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Applications Switch... See More ⇒
sts1980.pdf
STS1980 Semiconductor Semiconductor PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with STS5343 Ordering Information Type NO. Marking Package Code STS1980 STS1980 TO-92 Outline Dimensions unit mm 3.45 0... See More ⇒
Detailed specifications: STN2907ASF , STN2907S , STN2907SF , STN3904 , STN3904S , STN3904SF , STN3906 , STN3906S , BD333 , STS1980 , STS5343 , STS733 , STS8050 , STS9012 , STS9013 , STS9014 , STS9015 .
Keywords - STS1979 transistor specs
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