STS1979 Datasheet, Equivalent, Cross Reference Search
Type Designator: STS1979
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO-92
STS1979 Transistor Equivalent Substitute - Cross-Reference Search
STS1979 Datasheet (PDF)
sts1979.pdf
STS1979SemiconductorSemiconductorPNP Silicon TransistorDescription Medium power amplifierFeatures Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with STS5342Ordering InformationType NO. Marking Package CodeSTS1979 STS1979 TO-92Outline Dimensions unit : mm3.450.14.5
sts19n3llh6.pdf
STS19N3LLH6N-channel 30 V, 0.0049 , 19 A, SO-8STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax5678STS19N3LLH6 30 V 0.0056 19 A RDS(on) * Qg industry benchmark432 Extremely low on-resistance RDS(on) 1 High avalanche ruggednessSO-8 Low gate drive power losses Very low switching gate chargeApplications Switch
sts1980.pdf
STS1980Semiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with STS5343 Ordering Information Type NO. Marking Package Code STS1980 STS1980 TO-92 Outline Dimensions unit : mm 3.450
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
