All Transistors. BTA3513J3 Datasheet

 

BTA3513J3 Datasheet, Equivalent, Cross Reference Search

Type Designator: BTA3513J3

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 98 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO252

BTA3513J3 Transistor Equivalent Substitute - Cross-Reference Search

 

BTA3513J3 Datasheet (PDF)

1.1. bta3513j3.pdf Size:318K _cystek

BTA3513J3
BTA3513J3

Spec. No. : C607J3 Issued Date : 2010.12.08 CYStech Electronics Corp. Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80V IC -8A BTA3513J3 RCESAT 75mΩ typ. Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline BTA3513J3 TO-252(DPAK) B:Base C:Collector

3.1. bta3513i3.pdf Size:247K _cystek

BTA3513J3
BTA3513J3

Spec. No. : C607I3 Issued Date : 2012.02.10 CYStech Electronics Corp. Revised Date : Page No. : 1/9 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80V IC -10A BTA3513I3 RCESAT 75mΩ typ. Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline TO-251 BTA3513I3 B:Base C:Collector B C

Datasheet: BTA1797M3 , BTA1900M3 , BTA1952E3 , BTA1952I3 , BTA1952J3 , BTA1972K3 , BTA2029Y3 , BTA3513I3 , BC109C , BTA4403A3 , BTA9012A3 , BTB589N3 , BTB718N3 , BTB772AJ3 , BTB772AM3 , BTB772I3 , BTB772J3 .

 


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