All Transistors. BTD1805I3 Datasheet

 

BTD1805I3 Datasheet, Equivalent, Cross Reference Search

Type Designator: BTD1805I3

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO251

BTD1805I3 Transistor Equivalent Substitute - Cross-Reference Search

 

BTD1805I3 Datasheet (PDF)

1.1. btd1805i3.pdf Size:276K _cystek

BTD1805I3
BTD1805I3

Spec. No. : C820I3 Issued Date : 2004.12.19 CYStech Electronics Corp. Revised Date :2012.09.19 Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

3.1. btd1805d3.pdf Size:172K _upd

BTD1805I3
BTD1805I3

Spec. No. : C820D3 Issued Date : 2005.03.29 CYStech Electronics Corp. Revised Date :2005.04.20 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

3.2. btd1805ad3.pdf Size:249K _cystek

BTD1805I3
BTD1805I3

Spec. No. : C821D3 Issued Date : 2006.11.23 CYStech Electronics Corp. Revised Date :2012.07.13 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

3.3. btd1805fp.pdf Size:277K _cystek

BTD1805I3
BTD1805I3

Spec. No. : C820FP Issued Date : 2005.03.29 CYStech Electronics Corp. Revised Date :2013.10.29 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

3.4. btd1805bt3.pdf Size:146K _cystek

BTD1805I3
BTD1805I3

Spec. No. : C820T3 Issued Date : 2007.07.09 CYStech Electronics Corp. Revised Date : Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features •

3.5. btd1805f3.pdf Size:256K _cystek

BTD1805I3
BTD1805I3

Spec. No. : C820F3 Issued Date : 2011.12.01 CYStech Electronics Corp. Revised Date : 2011.12.16 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

3.6. btd1805j3.pdf Size:297K _cystek

BTD1805I3
BTD1805I3

Spec. No. : C820J3 Issued Date : 2004.12.19 CYStech Electronics Corp. Revised Date :2010.12.08 Page No. : 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60V IC 5A BTD1805J3 RCESAT 100mΩ Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with ve

Datasheet: BTD1768M3 , BTD1768N3 , BTD1768S3 , BTD1782N3 , BTD1805AD3 , BTD1805BT3 , BTD1805F3 , BTD1805FP , S8550 , BTD1805J3 , BTD1816I3 , BTD1816J3 , BTD1857A3 , BTD1857AD3 , BTD1857AE3 , BTD1857AFP , BTD1857AI3 .

 


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