All Transistors. 2SC383TM Datasheet

 

2SC383TM Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC383TM

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

2SC383TM Transistor Equivalent Substitute - Cross-Reference Search

 

2SC383TM Datasheet (PDF)

1.1. 2sc383tm.pdf Size:430K _blue-rocket-elect

2SC383TM
2SC383TM

2SC383TM(BR3DG383TMK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 高增益:G =33dB(典型值)(f=45MHz),h 线性好 pe FE 。 High gain: Gpe=33dB(Typ)(f=45MHz),good linearity of hFE.. 用途 / Applications 用于电视末级图象中放。 TV final picture IF

4.1. 2sc3834 3da3834.pdf Size:165K _update

2SC383TM
2SC383TM

2SC3834(3DA3834) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于湿度调节器,直流-直流转换器和一般用途。 Purpose: Humidifier, DC-DC converter, and general purpose. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25℃) 50

4.2. 2sc3834f 3da3834f.pdf Size:305K _update

2SC383TM
2SC383TM

2SC3834F(3DA3834F) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于湿度调节器,直流-直流转换器和一般用途。 Purpose: Humidifier, DC-DC converter, and general purpose. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25℃)

 4.3. l2sc3837qlt1g.pdf Size:79K _upd

2SC383TM
2SC383TM

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837QLT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837QLT1G 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE

4.4. l2sc3838qlt1g.pdf Size:78K _upd

2SC383TM
2SC383TM

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838QLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838QLT1G 2.Small rbb`Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE

 4.5. l2sc3837t1g.pdf Size:94K _upd

2SC383TM
2SC383TM

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

4.6. gst2sc3838.pdf Size:195K _upd

2SC383TM
2SC383TM

GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 11V amplifier and switch. Collector Current : 50mA Lead(Pb)-Free Packages & Pin Assignments GST2SC3838F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST

4.7. s-l2sc3837t1g.pdf Size:94K _upd

2SC383TM
2SC383TM

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

4.8. 2sc383 2sc388.pdf Size:259K _toshiba

2SC383TM
2SC383TM

4.9. 2sc5661 2sc4725 2sc4082 2sc3837k.pdf Size:187K _rohm

2SC383TM
2SC383TM

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 U

4.10. 2sc3838.pdf Size:64K _rohm

2SC383TM
2SC383TM

2SC5662 / 2SC4726 / 2SC4083 / Transistors 2SC3838K / 2SC4043S High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2SC5662 1.2 0.2 0.8 0.2 2) Small rbb?Cc and high gain. (Typ. 4ps) (2) 3) Small NF. (3) (1) (1) Base 0.15Max. (2) Emitter

4.11. 2sc3839k.pdf Size:184K _rohm

2SC383TM
2SC383TM

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.12. 2sc3837k.pdf Size:71K _rohm

2SC383TM
2SC383TM

2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units : mm) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 1.2 0.2 0.8 0.2 2) Small rbb?Cc and high gain. (Typ. 6ps) (2) (3) 3) Small NF. (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter (3) Colle

4.13. 2sc5662 2sc4726 2sc4083 2sc3838k.pdf Size:147K _rohm

2SC383TM
2SC383TM

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2S

4.14. 2sc3835.pdf Size:120K _utc

2SC383TM
2SC383TM

UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8 V Base Current IB 3 A Collector Current 7 A Ic

4.15. 2sc3834.pdf Size:208K _utc

2SC383TM
2SC383TM

UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220 B C

4.16. 2sc3838.pdf Size:128K _utc

2SC383TM
2SC383TM

UNISONIC TECHNOLOGIES CO., LTD 2SC3838 NPN SILICON TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 3 FEATURES 1 2 *High transition frequency. *Small rbb’·Cc and high gain. SOT-23 *Small NF. 3 1 2 SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3838L-x-AE3-R 2SC3838G-x-AE3-R SOT-23 E B C Tape Reel 2SC3838

4.17. 2sc3836.pdf Size:28K _hitachi

2SC383TM
2SC383TM

2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3836 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 300 mW Juncti

4.18. 2sc3835.pdf Size:117K _jmnic

2SC383TM
2SC383TM

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3835 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PAR

4.19. 2sc3834.pdf Size:118K _jmnic

2SC383TM
2SC383TM

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3834 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PAR

4.20. 2sc3830.pdf Size:24K _sanken-ele

2SC383TM

2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220) Symbol 2SC3830 Unit Symbol Conditions 2SC3830 Unit 0.2 4.8 0.2 10.2 0.1 VCBO 600 V ICBO VCB=600V 1max 2.0 mA VCEO 500 V

4.21. 2sc3835.pdf Size:28K _sanken-ele

2SC383TM

2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Unit Symbol Conditions Ratings 0.2 4.8 0.4 15.6 VCBO 200 VCB=200V 100max A 0.1 V ICBO 9.6 2.0 VCEO 120 IEBO VEB=8V 1

4.22. 2sc3832.pdf Size:24K _sanken-ele

2SC383TM

2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Conditions 2SC3832 Unit Symbol 2SC3832 Unit 0.2 4.8 0.2 10.2 0.1 ICBO VCBO 500 V VCB=500V 100max A 2.0 IEBO V

4.23. 2sc3831.pdf Size:25K _sanken-ele

2SC383TM

2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 600 V VCB=600V 1max mA ICBO VCEO 5

4.24. 2sc3834.pdf Size:23K _sanken-ele

2SC383TM

2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220) Symbol Symbol 2SC3834 Unit Conditions 2SC3834 Unit 0.2 4.8 0.2 10.2 0.1 2.0 ICBO VCBO 200 V VCB=200V 100max A IEBO 100max A VEB=8V

4.25. 2sc3833.pdf Size:25K _sanken-ele

2SC383TM

2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V VCB=500V 100max A ICBO VCE

4.26. 2sc3830.pdf Size:90K _inchange_semiconductor

2SC383TM
2SC383TM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITI

4.27. 2sc3835.pdf Size:326K _inchange_semiconductor

2SC383TM
2SC383TM

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=

4.28. 2sc3832.pdf Size:86K _inchange_semiconductor

2SC383TM
2SC383TM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITI

4.29. 2sc3831.pdf Size:123K _inchange_semiconductor

2SC383TM
2SC383TM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum

4.30. 2sc3834.pdf Size:328K _inchange_semiconductor

2SC383TM
2SC383TM

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=

4.31. 2sc3835g.pdf Size:312K _inchange_semiconductor

2SC383TM
2SC383TM

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta

4.32. 2sc3833.pdf Size:258K _inchange_semiconductor

2SC383TM
2SC383TM

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo

4.33. 2sc3838.pdf Size:282K _gsme

2SC383TM
2SC383TM

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3838 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 11 Vdc ???????? Collector-Base Voltage VCBO 20 Vdc ??????? Emitter-Base Voltage VEBO 3.0 Vd

4.34. 2sc3838.pdf Size:838K _wietron

2SC383TM
2SC383TM

2SC3838 COLLECTOR High-Frequency Amplifier Transistor 3 3 NPN Silicon 1 1 P b Lead(Pb)-Free 2 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25?C) Rating Symbol Value Unit V Collector-Emitter Voltage CEO 11 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC mA Collector Current-Continuous 50 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total

4.35. 2sc3834f.pdf Size:506K _blue-rocket-elect

2SC383TM
2SC383TM

2SC3834F(BR3DA3834F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 用途 / Applications 用于湿度调节器,直流-直流转换器和一般用途。 Humidifier, DC-DC converter, and general purpose. 内部等效电路 / Equivalent Circuit 引脚排列 /

4.36. l2sc3837lt1g.pdf Size:74K _lrc

2SC383TM
2SC383TM

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837LT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837LT1G 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

4.37. l2sc3838nlt1g.pdf Size:58K _lrc

2SC383TM
2SC383TM

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838NLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) 3 2.Small rbb`Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS (T = 25°C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 20 V CBO

4.38. l2sc3838lt1g.pdf Size:78K _lrc

2SC383TM
2SC383TM

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb`Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

4.39. 2sc3838.pdf Size:350K _kexin

2SC383TM

SMD Type Transistors NPN Transistors 2SC3838 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● High transition frequency. ● Small rbb’·Cc and high gain. ● Small NF. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Coll

Datasheet: 2SC1959M , 2SC2216M , 2SC2383T , 2SC2717M , 2SC2881A , 2SC3330M , 2SC3356W , 2SC3834F , BC327 , 2SC4081W , 2SC4155A , 2SC4458L , 2SC4793D , 2SC5171I , 2SC5171S , 2SC536KM , 2SC536M .

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