All Transistors. LX8050QLT1G Datasheet

 

LX8050QLT1G Datasheet, Equivalent, Cross Reference Search

Type Designator: LX8050QLT1G

SMD Transistor Code: X8C

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT23

LX8050QLT1G Transistor Equivalent Substitute - Cross-Reference Search

 

LX8050QLT1G Datasheet (PDF)

1.1. lx8050qlt1g.pdf Size:64K _lrc

LX8050QLT1G
LX8050QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LX8050PLT1G NPN Silicon Series S-LX8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.5A. Epitaxial planar type. 3 NPN complement: LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PPAP

Datasheet: LBC848BWT1G , LBC848CDW1T1G , LBC848CLT1G , LBC848CPDW1T1G , LBC848CWT1G , LBC850BLT1G , LBC850BWT1G , LBC850CLT1G , 2N3773 , LBSS4240LT1G , LBSS5240LT1G , LH8050QLT1G , LH8550QLT1G , LMBTH10LT1G , LMBTH10QLT1G , LMBTH10WT1G , LBC856ALT1G .

 


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