All Transistors. 2N66 Datasheet

 

2N66 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N66

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 80 °C

Transition Frequency (ft): 0.1 MHz

Noise Figure, dB: -

Package: MM1

2N66 Transistor Equivalent Substitute - Cross-Reference Search

 

2N66 Datasheet (PDF)

1.1. 2n6678m3a.pdf Size:590K _update

2N66
2N66

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A • High Voltage, Fast Switching. • Hermetic TO-254AA Isolated Metal Package. • Ideally suited for PWM Regulators, Power Supplies and Converter Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 650V VCEX VBE = -1.5V Collector – Emitt

1.2. 2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf Size:916K _update

2N66
2N66

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2

 1.3. 2n3773 2n6609.pdf Size:205K _motorola

2N66
2N66

Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid driv

1.4. 2n6667 2n6668.pdf Size:168K _motorola

2N66
2N66

Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon 2N6667 Power Transistors 2N6668 . . . designed for generalpurpose amplifier and low speed switching applications. High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc PNP SILICON CollectorEmitter Sustaining Voltage @ 200 mAdc DARLINGTON VCEO(sus) = 60 Vdc (Min) 2N66

 1.5. 2n6668.pdf Size:46K _st

2N66
2N66

2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND 3 AMPLIFIER 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 k? R2(typ) = 120 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-B

1.6. 2n6620 bfr34a.pdf Size:90K _siemens

2N66
2N66

1.7. 2n6661 vn88afd.pdf Size:73K _vishay

2N66
2N66

2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 1.6 V D Low-Voltage Oper

1.8. 2n6661-2.pdf Size:149K _vishay

2N66
2N66

New Product 2N6661-2 Vishay Siliconix N-Channel 90-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low On-Resistance: 3.6 ? Part VDS min. (V) RDS(on) max. (?) VGS(th) (V) ID (A) Low Threshold: 1.6 V Number Low Input Capacitance: 35 pF 4 at VGS = 10 V 2N6661-2 90 0.8 to 2 0.86 Fast Switching Speed: 6 ns Low Input and Output Leakage BENEFITS TO-205AD Low Offset Voltage

1.9. 2n3773 2n6609.pdf Size:80K _central

2N66

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

1.10. 2n3773 2n6609.pdf Size:93K _onsemi

2N66
2N66

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http://onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Feature

1.11. 2n6660.pdf Size:527K _supertex

2N66
2N66

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertexs well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a devic

1.12. 2n6660 2n6661.pdf Size:21K _supertex

2N66
2N66

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information.

1.13. 2n6661.pdf Size:369K _supertex

2N66
2N66

Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertexs well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device

1.14. 2n6383-85 2n6648-49 2n6650.pdf Size:146K _mospec

2N66
2N66

A A A

1.15. 2n6676-78.pdf Size:137K _mospec

2N66
2N66

A A A

1.16. 2n6671.pdf Size:345K _no

2N66
2N66

1.17. 2n6656-59 2n6660-61.pdf Size:42K _no

2N66



1.18. 2n6653.pdf Size:11K _semelab

2N66

2N6653 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.19. 2n6687.pdf Size:11K _semelab

2N66

2N6687 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 180V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.20. 2n6655.pdf Size:11K _semelab

2N66

2N6655 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.21. 2n6654.pdf Size:12K _semelab

2N66

2N6654 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.22. 2n6659.pdf Size:18K _semelab

2N66
2N66

2N6659 MECHANICAL DATA Dimensions in mm (inches) NCHANNEL 8.89 (0.35) ENHANCEMENT MODE 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MOS TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) Switching Regulators dia. Converters 5.08 (0.200) typ. Motor Drivers 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.

1.23. 2n6686.pdf Size:11K _semelab

2N66

2N6686 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 180V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.24. 2n6666 2n6667 2n6668.pdf Size:157K _bocasemi

2N66
2N66

A B O C A S E M I C O N D U C T O R C O R P A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.25. 2n6653.pdf Size:147K _jmnic

2N66
2N66

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

1.26. 2n6674.pdf Size:149K _jmnic

2N66
2N66

JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAME

1.27. 2n6654.pdf Size:147K _jmnic

2N66
2N66

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

1.28. 2n6671 2n6672 2n6673.pdf Size:150K _jmnic

2N66
2N66

JMnic Product Specification Silicon NPN Power Transistors 2N6671 2N6672 2N6673 DESCRIPTION ·With TO-3 package ·Low saturation voltage ·Fast switching speed ·High voltage ratings APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abso

1.29. 2n6674 2n6675 2n6689 2n6690.pdf Size:60K _microsemi

2N66
2N66

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VEBO

1.30. 2n6676 2n6678 2n6691 2n6693.pdf Size:70K _microsemi

2N66
2N66

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VEBO

1.31. 2n6653.pdf Size:116K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6653 MAXIMUN RA

1.32. 2n6674 2n6675.pdf Size:130K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?

1.33. 2n6687.pdf Size:116K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6687 DESCRIPTION Ў¤ With TO-3 package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for high-power switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж

1.34. 2n6688.pdf Size:116K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6688 DESCRIPTION Ў¤ With TO-3 package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for high-power switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж

1.35. 2n66762n66772n6678.pdf Size:118K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : Off-line power supplies Ў¤ Converter circuits Ў¤ Pulse width modulated regulators Ў¤ PINNING (See Fig.2) PIN 1 2 3 Base

1.36. 2n6654.pdf Size:116K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6654 MAXIMUN RA

1.37. 2n6666.pdf Size:142K _inchange_semiconductor

2N66
2N66

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose

1.38. 2n6671 2n6672 2n6673.pdf Size:117K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Low saturation voltage Ў¤ Fast switching speed Ў¤ High voltage ratings APPLICATIONS Ў¤ Off-line power supplies Ў¤ High-voltage inverters Ў¤ Switching regulators PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6671 2N6672 2N6673 Fig.1 simplified outline (TO-3) and

1.39. 2n6686.pdf Size:116K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6686 DESCRIPTION Ў¤ With TO-3 package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for high-power switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж

1.40. 2n6674 6675.pdf Size:176K _inchange_semiconductor

2N66
2N66

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION ·High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as: ·Switching regulators ·Inverters ·Solenoid and relay driv

1.41. 2n6676 2n6677 2n6678.pdf Size:131K _inchange_semiconductor

2N66
2N66

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : ·Off-line power supplies ·Converter circuits ·Pulse width modulated regulators PINNING (See Fig.

1.42. 2n6674 2n6675.pdf Size:177K _aeroflex

2N66
2N66

NPN High Power Silicon Transistors 2N6674 & 2N6675 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/537 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6674 2N6675 Units Collector - Emitter Voltage VCEO 300 400 Vdc Collector - Base Voltage VCBO 450 650 Vdc Collector - Base Voltage VCBX 450 650 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 5.

1.43. 2n6676 2n6678.pdf Size:174K _aeroflex

2N66
2N66

NPN High Power Silicon Transistors 2N6676 & 2N6678 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage VCEO 300 400 Vdc Collector - Base Voltage VCBO 450 650 Vdc Collector - Base Voltage VCBX 450 650 Vdc Emitter - Base Voltage VEBO 8.0 Vdc Base Current IB 5.

Datasheet: 2N6592 , 2N6593 , 2N6594 , 2N6595 , 2N6596 , 2N6597 , 2N6598 , 2N6599 , 2N4403 , 2N660 , 2N6600 , 2N6601 , 2N6602 , 2N6603 , 2N6604 , 2N6609 , 2N661 .

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