All Transistors. BUL55BSMD Datasheet

 

BUL55BSMD Datasheet, Equivalent, Cross Reference Search

Type Designator: BUL55BSMD

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 55 W

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 8 A

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO276AB

BUL55BSMD Transistor Equivalent Substitute - Cross-Reference Search

 

BUL55BSMD Datasheet (PDF)

1.1. bul55bsmd.pdf Size:10K _update

BUL55BSMD

BUL55BSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 250V IC = 8A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

5.1. bul55asmd.pdf Size:10K _update

BUL55BSMD

BUL55ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 7A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

5.2. bul5555.pdf Size:466K _update

BUL55BSMD
BUL55BSMD

BUL5555(BR3DD5555R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 开关速度快,安全工作区宽。 Fast speed switching, Wide SOA. 用途 / Applications 主要应用于高压转换,适用于电子节能灯。 High voltage switch mode,suitable for electro

Datasheet: BUL54A-SM , BUL54ASMD , BUL54A-T257F , BUL54A-TO5 , BUL54BSMD , TIP36CP , BUL5555 , BUL55ASMD , 2N60 , BUL56ASMD , BUL56BSMD , BUL57AN2A , BUL57AN2B , BUL58ASMD , BUL58BSMD , BUL62A , KA4A3Q .

 


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