All Transistors. MRF10120 Datasheet

 

MRF10120 Datasheet, Equivalent, Cross Reference Search

Type Designator: MRF10120

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 380 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1215 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 335C-02

MRF10120 Transistor Equivalent Substitute - Cross-Reference Search

 

MRF10120 Datasheet (PDF)

1.1. mrf10120.pdf Size:166K _update

MRF10120
MRF10120

MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 960–1215MHz Product Image Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) • 100% test

1.2. mrf10120.pdf Size:98K _motorola

MRF10120
MRF10120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10120/D The RF Line Microwave Long Pulse MRF10120 Power Transistor Designed for 9601215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak 120 W (PEAK), 9601215 MHz Gain = 8.0 dB Min., 9.2 dB (Typ) MICROWAVE

 

 

 4.1. mrf1015ma.pdf Size:341K _update

MRF10120
MRF10120

MRF1015MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ω Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960– 1215 MHz Minimum Gain = 10 dB MICROWAVE POWER ω 100% Tested for Load Mismatch at All

4.2. mrf1015mb.pdf Size:238K _update

MRF10120

HG RF POWER TRANSISTOR MRF1015MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ω Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB ω 100% Tested for Load Mismatch at All Phase Angles with 10:1

 4.3. mrf10150.pdf Size:181K _update

MRF10120
MRF10120

MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 1025–1150MHz Product Image Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) • 100% tested for loa

4.4. mrf10150.pdf Size:90K _motorola

MRF10120
MRF10120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10150/D The RF Line Microwave Pulse MRF10150 Power Transistor . . . designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak 150 W (PEAK) Gain = 9.5 dB Min, 10.0 dB (Typ) 10251150 MHz MICROWAVE POWE

 4.5. mrf1015m.pdf Size:110K _motorola

MRF10120
MRF10120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 9601215 MHz Minimum Gain =

Datasheet: MRF10005 , MRF1000MB , MRF1001A , MRF1002MA , MRF1002MB , MRF10031 , MRF1004MA , MRF1004MB , S9012 , MRF10150 , MRF1015MA , MRF1015MB , MRF10350 , MRF10502 , MRF1090MA , MRF1090MB , MRF1150MA .

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