All Transistors. 2SC5634 Datasheet

 

2SC5634 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5634

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 8000 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT23

2SC5634 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5634 Datasheet (PDF)

1.1. 2sc5634.pdf Size:127K _update

2SC5634
2SC5634

 :mm 2.5 0.5 0.5 1.5 1

4.1. 2sc5633.pdf Size:125K _update

2SC5634
2SC5634

 〈SMALL-SIGNAL TRANSISTOR〉 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm 2SC5633 is a super mini package resin sealed 4.6 MAX silicon NPN epitaxial transistor, 1.5 1.6 It is designed for high voltage application. C E B 0.53 FEATURE 0.4 MAX ●Low collector to emitter saturation voltage. 0.48

4.2. 2sc5635.pdf Size:130K _update

2SC5634
2SC5634

 :mm 2.1 0.425 0.425 1.25 1

 4.3. 2sc5636.pdf Size:102K _update

2SC5634
2SC5634

 :mm 1.6 0.4 0.4 0.8 1

4.4. l2sc5635lt1g.pdf Size:44K _upd

2SC5634
2SC5634

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor ” Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements;

 4.5. 2sc5639.pdf Size:42K _sanyo

2SC5634
2SC5634

Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5639] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7

4.6. 2sc5638.pdf Size:42K _sanyo

2SC5634
2SC5634

Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5638] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7

4.7. 2sc5637.pdf Size:42K _sanyo

2SC5634
2SC5634

Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5637] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7

4.8. 2sc5632.pdf Size:49K _panasonic

2SC5634
2SC5634

Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit: mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.30.1 2.00.2 Absolute Maximum Ratings Ta = 25C 10? Parameter Sym

4.9. 2sc5631.pdf Size:75K _hitachi

2SC5634
2SC5634

2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features High gain bandwidth product fT = 11 GHz typ. High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector Note: Marking is JR. 2SC5631 Absolute Maximum Ratings (Ta = 2

4.10. l2sc5635wt1g.pdf Size:2204K _lrc

2SC5634
2SC5634

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

Datasheet: 2SC5536A-TL-H , 2SC5551AE-TD-E , 2SC5551AF-TD-E , 2SC5566-TD-E , 2SC5569-TD-E , 2SC5621 , 2SC5625 , 2SC5633 , BC546 , 2SC5635 , 2SC5636 , 2SC5646A-TL-H , 2SC5658FHA , 2SC5658M3 , 2SC5658RM3 , 2SC5659FHA , 2SC5663GP .

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