All Transistors. MJE13004P1 Datasheet

 

MJE13004P1 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE13004P1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 2.8 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO92

MJE13004P1 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE13004P1 Datasheet (PDF)

1.1. mje13004p3.pdf Size:156K _update

MJE13004P1
MJE13004P1

MJE13004P3(3DD13004P3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于电子适配器、电子充电器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CB

1.2. mje13004p1.pdf Size:158K _update

MJE13004P1
MJE13004P1

MJE13004P1(3DD13004P1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

 2.1. mje13004 mje13005.pdf Size:72K _central

MJE13004P1
MJE13004P1

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV

2.2. mje13004 05.pdf Size:273K _cdil

MJE13004P1
MJE13004P1

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13004 MJE13005 UNIT Collector Emitter Sustaining Voltage VCEO (sus) 300 400 V Collector Emitter Voltage VCEV 600 700 V VEBO Emitte

 2.3. mje13004d.pdf Size:366K _kec

MJE13004P1
MJE13004P1

SEMICONDUCTOR MJE13004D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B D HIGH VOLTAGE AND HIGH SPEED C SWITCHING APPLICATION. E F FEATURES G ·Built-in Free Wheeling Diode H ·Suitable for Electrouic Ballast Application DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 MAXIMUM RATING (Ta=25?) _ + F 11.0 0.3 G 2.9 MAX

2.4. mje13004.pdf Size:120K _inchange_semiconductor

MJE13004P1
MJE13004P1

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounti

Datasheet: MJE13003VI1 , MJE13003VI5 , MJE13003VK1 , MJE13003VK3 , MJE13003VK5 , MJE13003VK7 , MJE13003VN5 , MJE13003VN7 , BC547 , MJE13004P3 , MJE13005A , MJE13005DC , MJE13005DP5 , MJE13005DQ3 , MJE13005DQ4 , MJE13005DQ5 , MJE13005DQ7 .

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