All Transistors. 3CD4399 Datasheet

 

3CD4399 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3CD4399

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

3CD4399 Transistor Equivalent Substitute - Cross-Reference Search

 

3CD4399 Datasheet (PDF)

1.1. 3cd4399.pdf Size:119K _china

3CD4399

3CD4399 型 PNP 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 200 W ICM 30 A IB 7.5 A 极 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ VCE=10V Rth 0.5 ℃/W IC=5A V(BR)CBO ICB=2mA ≥60 V V(BR)CEO ICE=2mA ≥60 V V(BR)EBO IEB=2mA ≥5.0 V ICBO VCB=20V ≤2.0 mA 直 ICEO VCE=20V ≤2.0 mA 流 IEBO VEB=4V ≤2.0 mA 参 数 VBEsa

5.1. 3cd438.pdf Size:125K _china

3CD4399

3CD438 型 PNP 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM 1.25 W 极 ICM 4 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=1mA ≥45 V V(BR)CEO ICE=10mA ≥45 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=45V ≤0.1 mA 直 ICEO VCE=45V ≤0.1 mA 流 参 IEBO VEB=5.0V ≤1.0 mA 数 IC=2.0A VCEsat ≤0.6 V IB=0.2A VCE=5.0V hFE ≥

Datasheet: 3CD3 , 3CD32 , 3CD32A , 3CD32B , 3CD32C , 3CD4 , 3CD42 , 3CD438 , SS8050 , 3CD5 , 3CD6 , 3CD6109 , 3CD6124 , 3CD6125 , 3CD6126 , 3CD8 , 3CD834 .

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