3DD6012A6 PDF Specs and Replacement
Type Designator: 3DD6012A6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 530 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO126
3DD6012A6 Substitution
3DD6012A6 PDF detailed specifications
9.1. Size:151K china
3dd60.pdf
3dd60.pdf
3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA ... See More ⇒
Detailed specifications: 3DD56 , 3DD57 , 3DD58 , 3DD59 , 3DD5A , 3DD5G , 3DD6 , 3DD60 , D882 , 3DD62 , 3DD63 , 3DD64 , 3DD65 , 3DD66 , 3DD68 , 3DD69 , 3DD6E-T .
History: 3DD9D
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