3DD6012A6 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD6012A6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 530 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO126
3DD6012A6 Transistor Equivalent Substitute - Cross-Reference Search
3DD6012A6 Datasheet (PDF)
3dd6012a6.pdf
NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50
3dd6012 a6.pdf
NPN R 3DD6012 A6 3DD6012 A6 NPN VCEO 530 V IC 1.5 A Ptot W TC=25 50
3dd6012 a1.pdf
NPN R 3DD6012 A1 3DD6012 A1 NPN VCEO 530 V IC 1.5 A Ptot Ta=25 0.8 W
3dd60.pdf
3DD59/3DD60 NPN A B C D E F PCM TC=75 25 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 4 /W IC=0.5A V(BR)CBO ICB=5mA 30 50 80 110 150 200 V V(BR)CEO ICE=5mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V 1.0 mA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
