3DG3130 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG3130
SMD Transistor Code: H1SP_H1SQ
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1400 MHz
Collector Capacitance (Cc): 1.4 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SOT23
3DG3130 Transistor Equivalent Substitute - Cross-Reference Search
3DG3130 Datasheet (PDF)
..1. Size:157K foshan
3dg3130.pdf
3dg3130.pdf
2SC3130(3DG3130) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency amplifier, oscillation and mixing amplification. f TFeatures: High f , small Cob and small Crb. T /Absolute maximum ratings(Ta=25)
9.1. Size:207K foshan
3dg3142.pdf
3dg3142.pdf
2SC3142(3DG3142) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30 mA C P 150 mW C T 150 j T -55150 stg
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
