All Transistors. 3DG3130 Datasheet

 

3DG3130 Datasheet and Replacement


   Type Designator: 3DG3130
   SMD Transistor Code: H1SP_H1SQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 1.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SOT23
 

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3DG3130 Datasheet (PDF)

 ..1. Size:157K  foshan
 3dg3130.pdf pdf_icon

3DG3130

2SC3130(3DG3130) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency amplifier, oscillation and mixing amplification. f TFeatures: High f , small Cob and small Crb. T /Absolute maximum ratings(Ta=25)

 8.1. Size:60K  china
 3dg3137.pdf pdf_icon

3DG3130

"3DG3137" 3DG3137 1 3DG3137 NPN VHF/UHF B4(A3-02B) 8.64 9.392 2.1

 9.1. Size:207K  foshan
 3dg3142.pdf pdf_icon

3DG3130

2SC3142(3DG3142) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30 mA C P 150 mW C T 150 j T -55150 stg

Datasheet: 3DG2881 , 3DG2881A , 3DG2884 , 3DG2909 , 3DG2999 , 3DG302 , 3DG3020 , 3DG3020A1 , 2SB817 , 3DG3137 , 3DG3142 , 3DG3326 , 3DG3330 , 3DG3332 , 3DG3355 , 3DG3356 , 3DG3357 .

History: 2SC1128

Keywords - 3DG3130 transistor datasheet

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