All Transistors. 3DG3130 Datasheet

 

3DG3130 Datasheet and Replacement


   Type Designator: 3DG3130
   SMD Transistor Code: H1SP_H1SQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 1.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SOT23
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3DG3130 Datasheet (PDF)

 ..1. Size:157K  foshan
 3dg3130.pdf pdf_icon

3DG3130

2SC3130(3DG3130) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency amplifier, oscillation and mixing amplification. f TFeatures: High f , small Cob and small Crb. T /Absolute maximum ratings(Ta=25)

 8.1. Size:60K  china
 3dg3137.pdf pdf_icon

3DG3130

"3DG3137" 3DG3137 1 3DG3137 NPN VHF/UHF B4(A3-02B) 8.64 9.392 2.1

 9.1. Size:207K  foshan
 3dg3142.pdf pdf_icon

3DG3130

2SC3142(3DG3142) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30 mA C P 150 mW C T 150 j T -55150 stg

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | BLW17 | LDTA115EET1G | KSA643Y | PHPT60406NY | KRA763E | CS9011I

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