All Transistors. 3DG4 Datasheet

 

3DG4 Datasheet and Replacement


   Type Designator: 3DG4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO92 SOT23 TO18
 

 3DG4 Substitution

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3DG4 Datasheet (PDF)

 ..1. Size:129K  china
3dg4.pdf pdf_icon

3DG4

3DG4 NPN A B C D E F G PCM 300 mW ICM 30 mA Tjm 175 Tstg -55~150 V(BR)CBO ICE=0.1mA 20 30 40 20 30 40 50 V V(BR)CEO ICE=0.1mA 15 20 30 15 20 30 40 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCE=10V 0.1 A ICEO VCE=10V 0.1 A IEBO

 0.1. Size:144K  crhj
3dg40005 as-h.pdf pdf_icon

3DG4

NPN R 3DG40005 AS-H 3DG40005 AS-H EB VEBO>20V NPN VCEO 400 V IC 50 mA hFE Ptot Ta=25 0.3 W

 0.2. Size:175K  crhj
3dg44.pdf pdf_icon

3DG4

NPN R 3DG44 3DG44 NPN VCEO 400 V IC 0.3 A Ptot Ta=25 0.625 W

 0.3. Size:109K  china
3dg42.pdf pdf_icon

3DG4

3DG42 NPN PCM TA=25 300 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1A 300 V V(BR)CEO ICE=1.0mA 300 V V(BR)EBO IEB=0.1A 6.0 V ICBO VCB=200V 100 nA IEBO VEB=6V 100 nA VBEsat IC=20mA 0.5 V IB=2mA VCEsat 0.9 VCE=10V hFE 40 IC=10mA

Datasheet: 3DG3648 , 3DG3779 , 3DG380TM , 3DG3838K , 3DG383TM , 3DG3841 , 3DG388ATM , 3DG3904 , B647 , 3DG4003 , 3DG4081 , 3DG4081W , 3DG4097 , 3DG4115S , 3DG4155A , 3DG42 , 3DG4401 .

Keywords - 3DG4 transistor datasheet

 3DG4 cross reference
 3DG4 equivalent finder
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