All Transistors. PH1214-0.85L Datasheet

 

PH1214-0.85L Datasheet, Equivalent, Cross Reference Search

Type Designator: PH1214-0.85L

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 9.2 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 0.71 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 9.3

Noise Figure, dB: -

Package: CERAMIC

PH1214-0.85L Transistor Equivalent Substitute - Cross-Reference Search

 

PH1214-0.85L Datasheet (PDF)

1.1. ph1214-0.85l.pdf Size:156K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-0.85L Radar Pulsed Power Transistor M/A-COM Products 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common emitter configuration • Broadband Class A operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • In

3.1. ph1214-220m.pdf Size:143K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-220M Radar Pulsed Power Transistor M/A-COM Products 220W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Inte

3.2. ph1214-55el.pdf Size:163K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-55EL Radar Pulsed Power Transistor M/A-COM Products 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal

 3.3. ph1214-25l.pdf Size:126K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-25L Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 300µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Intern

3.4. ph1214-25m.pdf Size:133K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Intern

 3.5. ph1214-30el.pdf Size:136K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-30EL Radar Pulsed Power Transistor M/A-COM Products 30W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal

3.6. ph1214-100el.pdf Size:140K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-100EL Radar Pulsed Power Transistor M/A-COM Products 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Intern

3.7. ph1214-3l.pdf Size:142K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-3L Radar Pulsed Power Transistor M/A-COM Products 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal in

3.8. ph1214-110m.pdf Size:140K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Inte

3.9. ph1214-6m.pdf Size:127K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-6M Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal

3.10. ph1214-2m.pdf Size:137K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-2M Radar Pulsed Power Transistor M/A-COM Products 2W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal

3.11. ph1214-12m.pdf Size:134K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-12M Radar Pulsed Power Transistor M/A-COM Products 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Intern

3.12. ph1214-40m.pdf Size:136K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-40M Radar Pulsed Power Transistor M/A-COM Products 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Intern

3.13. ph1214-300m.pdf Size:152K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-300M Radar Pulsed Power Transistor M/A-COM Products 300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Released, 30 May 07 Outline Drawing Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • In

3.14. ph1214-80m.pdf Size:138K _upd

PH1214-0.85L
PH1214-0.85L

PH1214-80M Radar Pulsed Power Transistor M/A-COM Products 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Released, 30 May 07 Features Outline Drawing • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Intern

Datasheet: PH0814-40 , PH1090-15L , PH1090-175L , PH1090-350L , PH1090-55S , PH1090-700B , PH1090-75L , PH1113-100 , BEL187 , PH1214-100EL , PH1214-110M , PH1214-12M , PH1214-220M , PH1214-25L , PH1214-25M , PH1214-2M , PH1214-300M .

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