2PB1424 Datasheet and Replacement
Type Designator: 2PB1424
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 37 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT89
2PB1424 Substitution
2PB1424 Datasheet (PDF)
2pb1424.pdf

2PB142420 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 15 January 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: 2PD2150.1.2 Features Low collector-emitter saturation voltage VCEsat H
2pb1424.pdf

2PB142420 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 15 January 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: 2PD2150.1.2 Features Low collector-emitter saturation voltage VCEsat H
Datasheet: 2N6301SMD05 , 2B3440CSM4R , 2PA1576 , 2PA1774 , 2PA1774M , 2PA1774QM , 2PA1774RM , 2PA1774SM , 13007 , 2PB709AQW , 2PB709ARL , 2PB709ART , 2PB709ASL , 2PB709AW , 2PB709AXL , 2PB709AXW , 2PB710ARL .
History: PIMN31
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History: PIMN31



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