BC858BWT1G PDF and Equivalents Search

 

BC858BWT1G Specs and Replacement

Type Designator: BC858BWT1G

SMD Transistor Code: 3K

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SOT323

 BC858BWT1G Substitution

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BC858BWT1G datasheet

 ..1. Size:78K  onsemi

bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC858BWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement... See More ⇒

 ..2. Size:81K  onsemi

bc858bwt1g.pdf pdf_icon

BC858BWT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement... See More ⇒

 0.1. Size:278K  lrc

lbc858bwt1g.pdf pdf_icon

BC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. Features S-LBC856AWT1G, BWT1G We declare that the material of product c... See More ⇒

 0.2. Size:254K  lrc

lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf pdf_icon

BC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product ... See More ⇒

Detailed specifications: BC857M , BC857QAS , BC858ALT1G , BC858AW-G , BC858AWT1G , BC858BLT1G , BC858BLT3G , BC858BW-G , 2SA1837 , BC858CDXV6T1G , BC858CLT1G , BC858CLT3G , BC858CW-G , BC858LT1 , BC868-10 , BC868-16 , BCM61B .

History: KTC5242A | KTC4468

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