DRA5124E Datasheet and Replacement
Type Designator: DRA5124E
SMD Transistor Code: LE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SMINI3-F2-B
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DRA5124E Datasheet (PDF)
dra5124e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124EDRA2124E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5124x.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124XDRA2124X in SMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturization of sets, reduction of
dra5124t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5124TDRA2124T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturization
dra5123e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5123EDRA2123E in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: BaseEmb
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUL66B | 2SD2140 | ZXTN07045EFF | 2SD1481 | MMS8550 | 2SD1927 | UN9110S
Keywords - DRA5124E transistor datasheet
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History: BUL66B | 2SD2140 | ZXTN07045EFF | 2SD1481 | MMS8550 | 2SD1927 | UN9110S



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