DRC5614T Datasheet, Equivalent, Cross Reference Search
Type Designator: DRC5614T
SMD Transistor Code: VT
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SMINI3-F2-B
DRC5614T Transistor Equivalent Substitute - Cross-Reference Search
DRC5614T Datasheet (PDF)
drc5614t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5614TSilicon NPN epitaxial planar typeFor digital circuits / mutingDRC2614T in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: BaseEmbossed type (Therm
drc5643t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC5643TSilicon NPN epitaxial planar typeFor digital circuits / mutingDRC2643T in SMini3 type package Features Package Contributes to miniaturization of sets, mount area reduction Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: Base 2: EmitterEmbossed type (The
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
