DRC5614T Datasheet and Replacement
Type Designator: DRC5614T
SMD Transistor Code: VT
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SMINI3-F2-B
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DRC5614T Datasheet (PDF)
drc5614t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC5614TSilicon NPN epitaxial planar typeFor digital circuits / mutingDRC2614T in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: BaseEmbossed type (Therm
drc5643t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC5643TSilicon NPN epitaxial planar typeFor digital circuits / mutingDRC2643T in SMini3 type package Features Package Contributes to miniaturization of sets, mount area reduction Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: Base 2: EmitterEmbossed type (The
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History: AC166 | KSD5741 | 2SC5489 | 2N4403SC | DMC364A6 | MM3725 | CS2640
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History: AC166 | KSD5741 | 2SC5489 | 2N4403SC | DMC364A6 | MM3725 | CS2640



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