All Transistors. 2SA1012 Datasheet

 

2SA1012 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1012

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 170 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220

2SA1012 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1012 Datasheet (PDF)

1.1. 2sa1012 3ca1012.pdf Size:226K _update

2SA1012
2SA1012

2SA1012(3CA1012) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于大电流开关。 Purpose: High current switching applications. 特点:饱和压降低,开关速度快,与 2SC2562(3DA2562)互补。 Features: Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

1.2. 2sa1012.pdf Size:215K _toshiba

2SA1012
2SA1012

1.3. 2sa1012.pdf Size:310K _utc

2SA1012
2SA1012

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . ? FEATURES *Low Collector Saturation Voltage V =-0.4V(max.) At Ic=-3A CE(SAT) *High Speed Switching Time: t =1.0?s(Typ.) S *Complementary To 2SC2562 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1012L-x-TA3

1.4. 2sa1012.pdf Size:116K _mospec

2SA1012
2SA1012

A A A

1.5. 2sa1012.pdf Size:119K _jmnic

2SA1012

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features B C E ?With TO-220 package ?Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissipation 2

1.6. 2sa1012.pdf Size:143K _inchange_semiconductor

2SA1012
2SA1012

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60

1.7. 2sa1012.pdf Size:318K _lge

2SA1012
2SA1012

2SA1012(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector

1.8. st2sa1012.pdf Size:583K _semtech

2SA1012
2SA1012

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collec

Datasheet: 2SA1008 , 2SA1009 , 2SA1009A , 2SA101 , 2SA1010 , 2SA1011 , 2SA1011D , 2SA1011E , SS8550 , 2SA1012O , 2SA1012Y , 2SA1013 , 2SA1013O , 2SA1013R , 2SA1014 , 2SA1015 , 2SA1015L .

 


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