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Type Designator: 2SA1018

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 120 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

2SA1018 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1018 Datasheet (PDF)

1.1. 2sa1018 e.pdf Size:40K _panasonic

2SA1018
2SA1018

Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC1473 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.2 +0.2 Collector to emitter voltage VCEO 200 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to base volta

1.2. 2sa1018.pdf Size:36K _panasonic

2SA1018
2SA1018

Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC1473 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.2 +0.2 Collector to emitter voltage VCEO 200 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to base volta

 

 

 4.1. 2sa1013-y.pdf Size:293K _update

2SA1018
2SA1018

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone: (818) 701-4933 Fax: (818) 701-4939 2SA1013-Y Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. PNP • Collector-current -1.0A Epitaxial Sili

4.2. 2sa1015-y.pdf Size:504K _update

2SA1018
2SA1018

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

 4.3. 2sa1015lt1.pdf Size:145K _update

2SA1018
2SA1018

 SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3 Emitter-Base Voltage Vebo -5 V

4.4. 2sa1013-o.pdf Size:293K _update

2SA1018
2SA1018

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone: (818) 701-4933 Fax: (818) 701-4939 2SA1013-Y Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. PNP • Collector-current -1.0A Epitaxial Sili

 4.5. 2sa1013-r.pdf Size:293K _update

2SA1018
2SA1018

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone: (818) 701-4933 Fax: (818) 701-4939 2SA1013-Y Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. PNP • Collector-current -1.0A Epitaxial Sili

4.6. 2sa1015-gr.pdf Size:504K _update

2SA1018
2SA1018

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

4.7. 2sa1012 3ca1012.pdf Size:226K _update

2SA1018
2SA1018

2SA1012(3CA1012) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于大电流开关。 Purpose: High current switching applications. 特点:饱和压降低,开关速度快,与 2SC2562(3DA2562)互补。 Features: Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

4.8. 2sa1011 3ca1011.pdf Size:186K _update

2SA1018
2SA1018

2SA1011(3CA1011) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于高压开关,音频功率放大,100W 输出前置放大。 Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. 特点:与 2SC2344(3DA2344)互补。 Features: complementary pair with 2SC2344(3DA2344). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数

4.9. 2sa1015-o.pdf Size:504K _update

2SA1018
2SA1018

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

4.10. 2sa1012.pdf Size:215K _toshiba

2SA1018
2SA1018

4.11. 2sa1015.pdf Size:227K _toshiba

2SA1018
2SA1018

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

4.12. 2sa1013.pdf Size:209K _toshiba

2SA1018
2SA1018

4.13. 2sa1015l.pdf Size:228K _toshiba

2SA1018
2SA1018

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low nois

4.14. 2sa1016 2sc2362.pdf Size:55K _sanyo

2SA1018
2SA1018

Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter ( ) : 2SA1016, 1016K 2 : Collecor 3 : Base Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta = 25?C 2SA1016K,

4.15. 2sa1011.pdf Size:42K _sanyo

2SA1018
2SA1018

Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 2 3 1 : Base ( ) : 2SA1011 2 : Collector 3 : Emitter 2.55 2.55 Specifications SANYO : TO220AB Absolute Maximum Ratings at Ta = 25?C

4.16. 2sa1016.pdf Size:127K _sanyo

2SA1018
2SA1018

4.17. 2sa1010.pdf Size:118K _nec

2SA1018
2SA1018

DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high- frequency power amplifiers. FEATURES Low collector satu

4.18. 2sa1012.pdf Size:310K _utc

2SA1018
2SA1018

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . ? FEATURES *Low Collector Saturation Voltage V =-0.4V(max.) At Ic=-3A CE(SAT) *High Speed Switching Time: t =1.0?s(Typ.) S *Complementary To 2SC2562 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1012L-x-TA3

4.19. 2sa1015.pdf Size:138K _utc

2SA1018
2SA1018

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO * Collector Current up to 150mA * High h Linearity FE * Complement to UTC 2SC1815 Lead-free: 2SA1015L Halogen-free: 2SA1015G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plat

4.20. 2sa1013.pdf Size:104K _utc

2SA1018
2SA1018

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR ? DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. ? FE

4.21. 2sa1012.pdf Size:116K _mospec

2SA1018
2SA1018

A A A

4.22. 2sa1017.pdf Size:30K _no

2SA1018

4.23. 2sa1015k.pdf Size:252K _secos

2SA1018
2SA1018

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM: 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM: -0.15 A 3 3 H 0.013 0.100 . Collector-Base Voltage

4.24. 2sa1013.pdf Size:369K _secos

2SA1018
2SA1018

2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L High Voltage:VCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1 1 1 2Collector 2 2 Complementary to 2SC2383 2 3Base 3 3 3 J A D CLASSIFICATION OF hFE Millimeter P

4.25. 2sa1012.pdf Size:119K _jmnic

2SA1018

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features B C E ?With TO-220 package ?Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissipation 2

4.26. 2sa1011.pdf Size:211K _jmnic

2SA1018
2SA1018

JMnic Product Specification Silicon PNP Power Transistors 2SA1011 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2344 APPLICATIONS ·High voltage switching , ·Audio frequency power amplifier; ·100W output predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMET

4.27. 2sa1010.pdf Size:174K _jmnic

2SA1018
2SA1018

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1010 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simpl

4.28. 2sa1012.pdf Size:143K _inchange_semiconductor

2SA1018
2SA1018

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60

4.29. 2sa1011.pdf Size:139K _inchange_semiconductor

2SA1018
2SA1018

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1011 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2344 APPLICATIONS ·High voltage switching , ·Audio frequency power amplifier; ·100W output predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?)

4.30. 2sa1010.pdf Size:203K _inchange_semiconductor

2SA1018
2SA1018

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- pl

4.31. 2sa1013 to-92mod.pdf Size:212K _lge

2SA1018
2SA1018

2SA1013 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 Features 6.200 High voltage:VCEO=-160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SC2383 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.1

4.32. 2sa1012.pdf Size:318K _lge

2SA1018
2SA1018

2SA1012(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector

4.33. 2sa1013.pdf Size:228K _lge

2SA1018
2SA1018

2SA1013 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High voltage:VCEO=-160V 8.200 0.600 Large continuous collector current capability 0.800 Complementary to 2SC2383 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25? unless otherwise noted) 2.440 2.640 Symb

4.34. 2sa1015m.pdf Size:926K _blue-rocket-elect

2SA1018
2SA1018

2SA1015M(BR3CG1015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流容量大,极好的hFE 特性,低噪声,可与2SC1815M(BR3DG1815M)互补。 High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M(BR3D

4.35. 2sa1013t.pdf Size:475K _blue-rocket-elect

2SA1018
2SA1018

2SA1013T(BR3CG1013T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 特征 / Features 击穿电压高,大电流特性好,可与 2SC2383T(BR3DG2383T)互补。 High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(BR3DG2383T). 用途 / Applicat

4.36. st2sa1012.pdf Size:583K _semtech

2SA1018
2SA1018

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collec

4.37. 2sa1015.pdf Size:775K _kexin

2SA1018
2SA1018

SMD Type or SMD Type TransistICs PNP Transistors 2SA1015 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Low niose: NF=1dB(Typ.) at f=1KHz 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VC

4.38. 2sa1013.pdf Size:305K _kexin

2SA1018

SMD Type Transistors PNP Transistors 2SA1013 1.70 0.1 ■ Features ● High voltage ● Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

4.39. 2sa1015.pdf Size:284K _shenzhen-tuofeng-semi

2SA1018
2SA1018

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba

Datasheet: 2SA1016F , 2SA1016G , 2SA1016H , 2SA1016K , 2SA1016KF , 2SA1016KG , 2SA1016KH , 2SA1017 , C945 , 2SA1019 , 2SA102 , 2SA1020 , 2SA1020O , 2SA1020Y , 2SA1021 , 2SA1022 , 2SA1023 .

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