All Transistors. 2SA1032 Datasheet

 

2SA1032 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1032

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 280 MHz

Collector Capacitance (Cc): 3.3 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

2SA1032 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1032 Datasheet (PDF)

1.1. 2sa1031 2sa1032.pdf Size:31K _hitachi

2SA1032
2SA1032

2SA1031, 2SA1032 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base

4.1. 2sa1036kfra.pdf Size:1030K _update

2SA1032
2SA1032

AEC-Q101 Qualified Medium Power Transistor 2SA1036KFRA Features Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036KFRA 2SA1036K operation. ± 2.9 0.2 1.1 +0.2 2SC2411KFRA 3) Complements the 2SC2411K. ± ± 1.9 0.2 -0.1 ± 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 Structure Epitaxial planer type (3) PNP silicon transistor

4.2. 2sa1037-q.pdf Size:170K _update

2SA1032
2SA1032

MCC 2SA1037-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1037-R CA 91311 Phone: (818) 701-4933 2SA1037-S Fax: (818) 701-4939 Features • Small Package PNP Silicon • Mounting:any position Epitaxial Transistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant

4.3. 2sa1036-r.pdf Size:249K _update

2SA1032
2SA1032

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone: (818) 701-4933 2SA1036-R Fax: (818) 701-4939 Features PNP Silicon • Large IC. ICMax.= -0.5 A • Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

4.4. 2sa1037kgp.pdf Size:177K _update

2SA1032
2SA1032

CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. (

4.5. 2sa1036-p.pdf Size:249K _update

2SA1032
2SA1032

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone: (818) 701-4933 2SA1036-R Fax: (818) 701-4939 Features PNP Silicon • Large IC. ICMax.= -0.5 A • Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

4.6. 2sa1036kgp.pdf Size:95K _update

2SA1032
2SA1032

CHENMKO ENTERPRISE CO.,LTD 2SA1036KGP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) (3)

4.7. 2sa1038s.pdf Size:69K _update

2SA1032
2SA1032

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-

4.8. 2sa1036-q.pdf Size:249K _update

2SA1032
2SA1032

MCC 2SA1036-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1036-Q CA 91311 Phone: (818) 701-4933 2SA1036-R Fax: (818) 701-4939 Features PNP Silicon • Large IC. ICMax.= -0.5 A • Low VCE(sat). Ideal for low-voltage operation. Epitaxial Transistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

4.9. 2sa1037akfra.pdf Size:1342K _update

2SA1032
2SA1032

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors AEC-Q101 Qualified Outline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 150mA Emitter Emitter 2SA2029 2SA1774EB 2SA2029FHA (SC-105AA) (SC-89) F

4.10. 2sa1037wgp.pdf Size:270K _update

2SA1032
2SA1032

CHENMKO ENTERPRISE CO.,LTD 2SA1037WGP SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current

4.11. 2sa1039a.pdf Size:130K _update

2SA1032
2SA1032

RoHS 2SA1309A 2SA1309A TRANSISTOR (PNP) TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.1 A 3. BASE Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified

4.12. 2sa1037-s.pdf Size:170K _update

2SA1032
2SA1032

MCC 2SA1037-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1037-R CA 91311 Phone: (818) 701-4933 2SA1037-S Fax: (818) 701-4939 Features • Small Package PNP Silicon • Mounting:any position Epitaxial Transistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant

4.13. 2sa1037-r.pdf Size:170K _update

2SA1032
2SA1032

MCC 2SA1037-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1037-R CA 91311 Phone: (818) 701-4933 2SA1037-S Fax: (818) 701-4939 Features • Small Package PNP Silicon • Mounting:any position Epitaxial Transistors • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant

4.14. 2sa1037ak 2sa1576a 2sa1774 2sa933as.pdf Size:100K _rohm

2SA1032
2SA1032

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units: mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_C)

4.15. 2sa1579 2sa1514k 2sa1038s.pdf Size:75K _rohm

2SA1032
2SA1032

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-323

4.16. 2sa1036k 2sa1577 2sa854s.pdf Size:101K _rohm

2SA1032
2SA1032

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum

4.17. 2sa1037ak.pdf Size:138K _rohm

2SA1032
2SA1032

General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25 ?Structure 1.6 2.1 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensio

4.18. 2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf Size:168K _rohm

2SA1032
2SA1032

General Purpose Transistor (?50V, ?0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 ?Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each

4.19. 2sa854 2sa1036k 2sa1577.pdf Size:101K _rohm

2SA1032
2SA1032

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum

4.20. 2sa1036k.pdf Size:162K _rohm

2SA1032
2SA1032

Medium Power Transistor 2SA1036K ?Features ?Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036K operation. 2.9 0.2 1.1 +0.2 3) Complements the 2SC2411K. 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 ?Structure Epitaxial planer type (3) PNP silicon transistor +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals

4.21. 2sa1034 2sa1035.pdf Size:55K _panasonic

2SA1032
2SA1032

Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2405 and 2SC2406 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing a

4.22. 2sa1029 2sa1030.pdf Size:24K _hitachi

2SA1032
2SA1032

2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5

4.23. 2sa1037.pdf Size:368K _secos

2SA1032
2SA1032

2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L 3 3 MECHANICAL DATA Top View C B Case: SOT-23, Molded Plastic 1 1 2 Weight: 0.008 grams(approx.) 2 K E D H J CLASSIFICATION OF

4.24. 2sa1036.pdf Size:694K _secos

2SA1032
2SA1032

2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82~180 120~270 180~

4.25. 2sa1037.pdf Size:338K _htsemi

2SA1032
2SA1032

2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES • Excellent hFE linearity. • Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA P

4.26. 2sa1036.pdf Size:363K _htsemi

2SA1032
2SA1032

2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES • Large IC. ICMax.= -500 mA • Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Curr

4.27. 2sa1037.pdf Size:210K _lge

2SA1032
2SA1032

2SA1037 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V

4.28. 2sa1036.pdf Size:213K _lge

2SA1032
2SA1032

2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitt

4.29. 2sa1037ak.pdf Size:214K _lge

2SA1032
2SA1032

2SA1037AK SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.15 1.90 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volt

4.30. 2sa1036k.pdf Size:225K _lge

2SA1032
2SA1032

2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Co

4.31. 2sa1037ak.pdf Size:1466K _wietron

2SA1032
2SA1032

2SA1037AK PNP 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -50 -60 -6.0 -150 200 1.6 625 TJ ,Tstg -1.0 -50 -50 -60 -6.0 -50 u -0.1 IE= ) O Vdc, 0 E=-50 u -0.1 -60 -0.1 u -6.0 WEITRON 1/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTI

4.32. 2sa1036k.pdf Size:210K _wietron

2SA1032
2SA1032

2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25°C Tj °C Junction Temperature +150 Tstg Storage Temperature -55

4.33. 2sa1037akxlt1.pdf Size:326K _willas

2SA1032
2SA1032

FM120-M WILLAS 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H • Low profile surface mounted application in order to

4.34. 2sa1036kxlt1.pdf Size:329K _willas

2SA1032
2SA1032

FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to op

4.35. l2sa1036krlt1g.pdf Size:167K _lrc

2SA1032
2SA1032

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

4.36. l2sa1037akrlt1g.pdf Size:142K _lrc

2SA1032
2SA1032

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

4.37. l2sa1037akslt1g.pdf Size:143K _lrc

2SA1032
2SA1032

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features We declare that the material of product compliance with RoHS requirements. L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pac

4.38. l2sa1036kqlt1g.pdf Size:165K _lrc

2SA1032
2SA1032

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

4.39. l2sa1037akqlt1g.pdf Size:142K _lrc

2SA1032
2SA1032

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

4.40. 2sa1037.pdf Size:1216K _kexin

2SA1032
2SA1032

SMD Type Transistors PNP Transistors 2SA1037 (2SA1037AK) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=150mA ● Collector Emitter Voltage VCEO=-50V 1 2 ● Complments the 2SC2412 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

4.41. 2sa1034.pdf Size:1127K _kexin

2SA1032
2SA1032

SMD Type Transistors PNP Transistors 2SA1034 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=-50mA ● Collector Emitter Voltage VCEO=-35V 1 2 ● Complementary to 2SC2405 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collect

4.42. 2sa1036.pdf Size:1179K _kexin

2SA1032
2SA1032

SMD Type Transistors PNP Transistors 2SA1036 (2SA1036K) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Large IC. ICMax. = -500mA Low VCE(sat). Ideal for low-voltage operation. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter

4.43. 2sa1035.pdf Size:1026K _kexin

2SA1032
2SA1032

SMD Type or SMD Type TransistICs PNP Transistors 2SA1035 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● Complementary to 2SC2406. +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base volta

Datasheet: 2SA1025 , 2SA1026 , 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 , 2SC5200 , 2SA1033 , 2SA1034 , 2SA1035 , 2SA1036 , 2SA1036K , 2SA1037 , 2SA1037K , 2SA1037KLN .

 


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