All Transistors. 2SA1063 Datasheet

 

2SA1063 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1063

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 125 ¬įC

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

2SA1063 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1063 Datasheet (PDF)

1.1. 2sa1063.pdf Size:173K _jmnic

2SA1063
2SA1063

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1063 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum

1.2. 2sa1063.pdf Size:159K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1063 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolut

 

 

 4.1. 2sa1069a-z.pdf Size:265K _update

2SA1063
2SA1063

ÔĽŅTo our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sa1069 2sa1069a.pdf Size:136K _nec

2SA1063
2SA1063

DATA SHEET SILICON POWER TRANSISTORS 2SA1069, 1069A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1069/1069A are the mold power transistors developed for high-speed switching, and is ideal for use as a driver in devices such Part No. Pac age as switching regulators, DC/DC converters, and high-frequency power 2SA1069 -220AB amplifiers. 2SA1069A

 4.3. 2sa1062 2sc2486.pdf Size:89K _panasonic

2SA1063
2SA1063

4.4. 2sa1061 2sc2485.pdf Size:102K _panasonic

2SA1063
2SA1063

 4.5. 2sa1060.pdf Size:260K _jmnic

2SA1063
2SA1063

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1060 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2484 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rating

4.6. 2sa1069 2sa1069a.pdf Size:161K _jmnic

2SA1063
2SA1063

JMnic Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION ·With TO-220 package ·Complement to type 2SC2516/2516A ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·High-frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-

4.7. 2sa1064.pdf Size:152K _jmnic

2SA1063
2SA1063

JMnic Product Specification Silicon PNP Power Transistors 2SA1064 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2SC2488 ·High transition frequency APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Co

4.8. 2sa1068.pdf Size:146K _jmnic

2SA1063
2SA1063

JMnic Product Specification Silicon PNP Power Transistors 2SA1068 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMB

4.9. 2sa1067.pdf Size:146K _jmnic

2SA1063
2SA1063

JMnic Product Specification Silicon PNP Power Transistors 2SA1067 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMB

4.10. 2sa1061.pdf Size:113K _jmnic

2SA1063
2SA1063

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2485 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati

4.11. 2sa1065.pdf Size:152K _jmnic

2SA1063
2SA1063

JMnic Product Specification Silicon PNP Power Transistors 2SA1065 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency ·Complement to type 2SC2489 APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Co

4.12. 2sa1062.pdf Size:158K _jmnic

2SA1063
2SA1063

JMnic Product Specification Silicon PNP Power Transistors 2SA1062 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2486 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=2

4.13. 2sa1060.pdf Size:119K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1060 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2484 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxi

4.14. 2sa1069-a.pdf Size:93K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION ·With TO-220 package ·Complement to type 2SC2516/2516A ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·High-frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simpli

4.15. 2sa1064.pdf Size:159K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1064 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2SC2488 ·High transition frequency APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

4.16. 2sa1068.pdf Size:149K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1068 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rat

4.17. 2sa1067.pdf Size:149K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1067 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rat

4.18. 2sa1061.pdf Size:81K _inchange_semiconductor

2SA1063
2SA1063

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1061 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation ·Complement to Type 2SC2485 APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas

4.19. 2sa1065.pdf Size:157K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1065 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency ·Complement to type 2SC2489 APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

4.20. 2sa1062.pdf Size:119K _inchange_semiconductor

2SA1063
2SA1063

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1062 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2486 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxi

Datasheet: 2SA1056 , 2SA1057 , 2SA1058 , 2SA1059 , 2SA106 , 2SA1060 , 2SA1061 , 2SA1062 , 2SA1015 , 2SA1064 , 2SA1065 , 2SA1066 , 2SA1067 , 2SA1068 , 2SA1069 , 2SA1069A , 2SA107 .

Back to Top

 


2SA1063
  2SA1063
  2SA1063
 

social 

LIST

Last Update

BJT: MMUN2235L | MMUN2234LT1G | MMUN2234LT1 | MMUN2233LT1G | MMUN2233LT1 | MMUN2232LT1G | MMUN2232LT1 | MMUN2231LT1G | MMUN2231LT1 | MMUN2230LT1G | MMUN2230LT1 | MMUN2230L | MMUN2217LT1G | MMUN2217L | MMUN2216LT1G | MMUN2216LT1 | MMUN2215LT1G | MMUN2215LT1 | MMUN2214LT1G | MMUN2214LT1 |