All Transistors. 2SA1124 Datasheet

 

2SA1124 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1124

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 65

Noise Figure, dB: -

Package: TO92

2SA1124 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1124 Datasheet (PDF)

1.1. 2sa1124 e.pdf Size:40K _panasonic

2SA1124
2SA1124

Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SC2632 5.9 0.2 4.9 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. 0.7 0.1 Small collector output capacitance Cob. Makes up a complementary pair with 2SC2632,

1.2. 2sa1124.pdf Size:36K _panasonic

2SA1124
2SA1124

Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SC2632 5.9 0.2 4.9 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. 0.7 0.1 Small collector output capacitance Cob. Makes up a complementary pair with 2SC2632,

4.1. 2sa1129 3ca1129.pdf Size:291K _update

2SA1124
2SA1124

2SA1129(3CA1129) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于低频功率放大和中速开关。 Purpose: For low-frequency power amplifiers and mid-speed switching. 特点:大电流,低饱和,与 2SC2654(3DA2654)互补。 Features: Large current capacity with small package, low collector saturation voltage, pair with 2SC2654(3DA2654). 极限参数/Absolute

4.2. r07ds0271ej 2sa1121-1.pdf Size:86K _renesas

2SA1124
2SA1124

Preliminary Datasheet R07DS0271EJ0300 2SA1121 (Previous: REJ03G0636-0200) Rev.3.00 Silicon PNP Epitaxial Mar 28, 2011 Application ? Low frequency amplifier ? Complementary pair with 2SC2618 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to b

4.3. 2sa1129.pdf Size:103K _nec

2SA1124
2SA1124

DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed ORDERING INFORMATION switching, and is ideal for use as a ramp driver. Part No. Package 2SA1129 TO-220AB FEATURES Large current capacity with small package: IC(DC) = -7.0 A (TO-220AB) L

4.4. 2sa1128.pdf Size:36K _panasonic

2SA1124
2SA1124

Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1 Collector

4.5. 2sa1127 e.pdf Size:41K _panasonic

2SA1124
2SA1124

Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2634 5.0 0.2 4.0 0.2 Features Low noise characteristics. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 Collector to emitter volta

4.6. 2sa1123 e.pdf Size:40K _panasonic

2SA1124
2SA1124

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is o

4.7. 2sa1123.pdf Size:36K _panasonic

2SA1124
2SA1124

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is o

4.8. 2sa1127.pdf Size:37K _panasonic

2SA1124
2SA1124

Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2634 5.0 0.2 4.0 0.2 Features Low noise characteristics. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 Collector to emitter volta

4.9. 2sa1128 e.pdf Size:40K _panasonic

2SA1124
2SA1124

Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1 Collector

4.10. 2sa1121.pdf Size:24K _hitachi

2SA1124
2SA1124

2SA1121 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2618 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1121 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power

4.11. 2sa1122.pdf Size:24K _hitachi

2SA1124
2SA1124

2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1122 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction tempe

4.12. 2sa1120.pdf Size:146K _jmnic

2SA1124
2SA1124

JMnic Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION · ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

4.13. 2sa1129.pdf Size:180K _jmnic

2SA1124
2SA1124

JMnic Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified ou

4.14. 2sa1125.pdf Size:175K _jmnic

2SA1124
2SA1124

JMnic Product Specification Silicon PNP Power Transistors 2SA1125 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum r

4.15. 2sa1120.pdf Size:135K _inchange_semiconductor

2SA1124
2SA1124

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION · ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIO

4.16. 2sa1129.pdf Size:91K _inchange_semiconductor

2SA1124
2SA1124

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fi

4.17. 2sa1125.pdf Size:86K _inchange_semiconductor

2SA1124
2SA1124

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1125 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base A

4.18. 2sa1121.pdf Size:766K _kexin

2SA1124
2SA1124

SMD Type or SMD Type TransistICs PNP Transistors 2SA1121 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features ● Low frequency amplifier ● Complementary pair with 2SC2618 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -35 V Collector to emitter

4.19. 2sa1122.pdf Size:583K _kexin

2SA1124
2SA1124

SMD Type or SMD Type TransistICs PNP Transistors 2SA1122 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Low frequency amplifier 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -55 V Collector to emitter voltage VCEO -55 V Emitter to base vol

Datasheet: 2SA1121B , 2SA1121C , 2SA1121D , 2SA1122 , 2SA1122C , 2SA1122D , 2SA1122E , 2SA1123 , S9013 , 2SA1125 , 2SA1126 , 2SA1127 , 2SA1128 , 2SA1129 , 2SA113 , 2SA1133 , 2SA1133A .

 


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