All Transistors. 2SA1187 Datasheet

 

2SA1187 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1187

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 110 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: XM20

2SA1187 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1187 Datasheet (PDF)

1.1. 2sa1187.pdf Size:166K _jmnic

2SA1187
2SA1187

JMnic Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION ·With MT-200 package ·High current capability APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE

1.2. 2sa1187.pdf Size:173K _inchange_semiconductor

2SA1187
2SA1187

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION ·With MT-200 package ·High current capability APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

 

 

 4.1. 2sa1182.pdf Size:201K _toshiba

2SA1187
2SA1187

2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-b

4.2. 2sa1188 2sa1189.pdf Size:24K _hitachi

2SA1187
2SA1187

2SA1188, 2SA1189 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1188 2SA1189 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO

 4.3. 2sa1184.pdf Size:145K _jmnic

2SA1187
2SA1187

JMnic Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION · ·With TO-126 package ·High breakdown voltage APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

4.4. 2sa1186.pdf Size:191K _jmnic

2SA1187
2SA1187

JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION ·With TO-3PN package ·High current capability ·Complement to type 2SC2837 APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYM

 4.5. 2sa1185.pdf Size:156K _jmnic

2SA1187
2SA1187

JMnic Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION ·With TO-3PN package ·High current capability ·Low collector saturation voltage APPLICATIONS ·High power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SY

4.6. 2sa1180.pdf Size:144K _jmnic

2SA1187
2SA1187

JMnic Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION ·With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE

4.7. 2sa1186.pdf Size:27K _sanken-ele

2SA1187

LAPT 2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol Symbol Ratings Unit Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 ICBO VCB=150V 100max A 9.6 2.0 VCBO 150 V IEBO VEB=5V 100max A VCEO 150 V

4.8. 2sa1184.pdf Size:136K _inchange_semiconductor

2SA1187
2SA1187

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION · ·With TO-126 package ·High breakdown voltage APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

4.9. 2sa1186.pdf Size:106K _inchange_semiconductor

2SA1187
2SA1187

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VC

4.10. 2sa1185.pdf Size:119K _inchange_semiconductor

2SA1187
2SA1187

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION ·With TO-3PN package ·High current capability ·Low collector saturation voltage APPLICATIONS ·High power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum r

4.11. 2sa1180.pdf Size:150K _inchange_semiconductor

2SA1187
2SA1187

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION ·With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

4.12. 2sa1182.pdf Size:906K _kexin

2SA1187
2SA1187

SMD Type Transistors PNP Transistors 2SA1182 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=-0.5A 1 2 ● Collector Emitter Voltage VCEO=-32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complementary to 2SC2859. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collect

Datasheet: 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y , BD140 , 2SA1188 , 2SA1189 , 2SA119 , 2SA1190 , 2SA1191 , 2SA1193 , 2SA1194 , 2SA1194K .

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