All Transistors. 2SA1194 Datasheet

 

2SA1194 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1194

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 3500

Noise Figure, dB: -

Package: TO126

2SA1194 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1194 Datasheet (PDF)

1.1. 2sa1194.pdf Size:35K _hitachi

2SA1194
2SA1194

2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –7 V Collector current IC –1 A Collector peak current IC(peak) –2 A Collector power

4.1. 2sa1195.pdf Size:126K _toshiba

2SA1194
2SA1194

4.2. 2sa1199.pdf Size:118K _rohm

2SA1194
2SA1194

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 4.3. 2sa1190 2sa1191.pdf Size:45K _hitachi

2SA1194
2SA1194

2SA1190, 2SA1191 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2855 and 2SC2856 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190, 2SA1191 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1190 2SA1191 Unit Collector to base voltage VCBO –90 –120 V Collector to emitter voltage VCEO –90 –120 V Emitter to base vo

4.4. 2sa1193k.pdf Size:35K _hitachi

2SA1194
2SA1194

2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –7 V Collector current IC –0.5 A Collector peak

 4.5. 2sa1193.pdf Size:34K _hitachi

2SA1194
2SA1194

2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –7 V Collector current IC –0.5 A Collector peak current iC(p

4.6. 2sa1195.pdf Size:148K _jmnic

2SA1194
2SA1194

JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION ·With TO-202 package ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL P

4.7. 2sa1195.pdf Size:145K _inchange_semiconductor

2SA1194
2SA1194

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION ·With TO-202 package ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (T

Datasheet: 2SA1186Y , 2SA1187 , 2SA1188 , 2SA1189 , 2SA119 , 2SA1190 , 2SA1191 , 2SA1193 , 2N5551 , 2SA1194K , 2SA1195 , 2SA1196 , 2SA1197 , 2SA1198 , 2SA1198S , 2SA1199 , 2SA1199S .

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