All Transistors. 2SA1207 Datasheet

 

2SA1207 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1207

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

2SA1207 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1207 Datasheet (PDF)

1.1. 2sa1207.pdf Size:122K _sanyo

2SA1207
2SA1207

Ordering number:EN778E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit:mm High breakdown voltage. 2003A Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. JEDEC:TO-92 B:Base ( ) : 2SA1207 EIAJ:SC-43 C:Collector SANYO

1.2. 2sa1207 2sc2909.pdf Size:45K _sanyo

2SA1207
2SA1207

Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit:mm High breakdown voltage. 2003B Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter 2 : C

 4.1. 2sa1201-o.pdf Size:386K _update

2SA1207
2SA1207

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon • Power amplifier applications Power Transistors • Epoxy meets UL 94 V-0 flammability

4.2. 2sa1201-y.pdf Size:386K _update

2SA1207
2SA1207

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon • Power amplifier applications Power Transistors • Epoxy meets UL 94 V-0 flammability

 4.3. 2sa1203.pdf Size:99K _toshiba

2SA1207
2SA1207

2SA1203 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2883 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -30 V Colle

4.4. 2sa1200.pdf Size:132K _toshiba

2SA1207
2SA1207

2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 High Voltage Switching Applications Unit: mm High voltage: VCEO = -150 V High transition frequency: f = 120 MHz (typ.) T Small flat package P = 1 to 2 W (mounted on ceramic substrate) C Complementary to 2SC2880 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collecto

 4.5. 2sa1202.pdf Size:111K _toshiba

2SA1207
2SA1207

2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Unit: mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2882 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-

4.6. 2sa1204.pdf Size:138K _toshiba

2SA1207
2SA1207

2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2884 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

4.7. 2sa1201.pdf Size:151K _toshiba

2SA1207
2SA1207

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit: mm Power Amplifier Applications High voltage: VCEO = -120 V High transition frequency: f = 120 MHz (typ.) T Small flat package P C = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25C) Characteristics Symbol R

4.8. 2sa1208 2sc2910.pdf Size:44K _sanyo

2SA1207
2SA1207

Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions Adoption of FBET process. unit:mm High breakdown voltage. 2006B Excellent linearity of hFE and small Cob. [2SA1208/2SC2910] Fast swtching speed. 6.0 5.0 4.7 0.5 0.6 0.5 0.5 1 2 3 1 : Emitter (

4.9. 2sa1209.pdf Size:119K _sanyo

2SA1207
2SA1207

Ordering number:EN779C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit:mm High breakdown voltage. 2009A Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. Switching Test Circuit IC=10IB1=10IB2=10mA (For PN

4.10. 2sa1209 2sc2911.pdf Size:43K _sanyo

2SA1207
2SA1207

Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit:mm High breakdown voltage. 2009B Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5 1 2 3

4.11. 2sa1208.pdf Size:107K _sanyo

2SA1207
2SA1207

4.12. 2sa1206.pdf Size:149K _nec

2SA1207
2SA1207

4.13. 2sa1201.pdf Size:81K _utc

2SA1207
2SA1207

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR ? DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. ? FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ? ORDERING INFORMATION Ordering Number Pin As

4.14. 2sa1201.pdf Size:228K _secos

2SA1207
2SA1207

2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V Millimeter Millimeter REF. REF.

4.15. 2sa1209.pdf Size:208K _jmnic

2SA1207
2SA1207

JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYM

4.16. 2sa1205.pdf Size:149K _jmnic

2SA1207
2SA1207

JMnic Product Specification Silicon PNP Power Transistors 2SA1205 DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

4.17. 2sa1205.pdf Size:211K _sanken-ele

2SA1207
2SA1207

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.18. 2sa1209.pdf Size:195K _inchange_semiconductor

2SA1207
2SA1207

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rati

4.19. 2sa1205.pdf Size:112K _inchange_semiconductor

2SA1207
2SA1207

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1205 DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITI

4.20. 2sa1203.pdf Size:183K _htsemi

2SA1207

2SA1 203 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC

4.21. 2sa1204.pdf Size:184K _htsemi

2SA1207

2SA1 204 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2884 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application High DC Current Gain MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Coll

4.22. 2sa1201.pdf Size:276K _htsemi

2SA1207
2SA1207

2SA1 201 SOT-89 TRANSISTOR(PNP) 1. BASE FEATURES High voltage 2. COLLECTOR 1 High transition frequency 2 Complementary to 2SC2881 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage V IC Collector Current -Continu

4.23. 2sa1201 sot-89.pdf Size:217K _lge

2SA1207
2SA1207

2SA1201 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 High voltage MIN 0.53 High transition frequency 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SC2881 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parame

4.24. 2sa1201.pdf Size:345K _willas

2SA1207
2SA1207

FM120-M WILLAS THRU 2SA1201 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better rever SOD-123H TRANSISTOR se leakage current and thermal resistance. (PNP) • Low profile surface mounted applicatio

4.25. 2sa1203.pdf Size:1194K _kexin

2SA1207
2SA1207

SMD Type Transistors PNP Transistors 2SA1203 1.70 0.1 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package 0.42 0.1 0.46 0.1 PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2883 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V

4.26. 2sa1200.pdf Size:849K _kexin

2SA1207
2SA1207

SMD Type Transistors PNP Transistors 2SA1200 Features 1.70 0.1 High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SC2880 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO -150 V Collector-Base Voltage VCBO -150 V Emitter-Base Vol

4.27. 2sa1202.pdf Size:1237K _kexin

2SA1207
2SA1207

SMD Type Transistors PNP Transistors 2SA1202 1.70 0.1 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package 0.42 0.1 PC = 1 to 2W (mounted on ceramic substrate) 0.46 0.1 Complementary to 2SC2882 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -

4.28. 2sa1204.pdf Size:1212K _kexin

2SA1207
2SA1207

SMD Type Transistors PNP Transistors 2SA1204 1.70 0.1 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SC2884 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V

4.29. 2sa1201.pdf Size:646K _kexin

2SA1207
2SA1207

SMD Type Transistors PNP Transistors 2SA1201 1.70 0.1 ■ Features ● High voltage ● High transition frequency ● Complementary to 2SC2881 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collect

Datasheet: 2SA120 , 2SA1200 , 2SA1201 , 2SA1202 , 2SA1203 , 2SA1204 , 2SA1205 , 2SA1206 , S9013 , 2SA1207R , 2SA1207S , 2SA1207T , 2SA1208 , 2SA1208R , 2SA1208S , 2SA1208T , 2SA1209 .

Back to Top

 


2SA1207
  2SA1207
  2SA1207
 

social 

LIST

Last Update

BJT: US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA | UMH1NFHA | UMH14NFHA | UMH14N | UMH11NFHA | UMH10NFHA | UMD9NFHA | UMD6NFHA | UMD5N | UMD4N | UMD3NFHA |