All Transistors. 2SA1211 Datasheet

 

2SA1211 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1211

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

2SA1211 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1211 Datasheet (PDF)

4.1. 2sa1213o-g.pdf Size:143K _update

2SA1211
2SA1211

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 : Base -Small flat package. 2 : Collector SOT-89-3L 3 : Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25°C unless other

4.2. 2sa1213-o.pdf Size:471K _update

2SA1211
2SA1211

2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors • Small

4.3. 2sa1213gp.pdf Size:138K _update

2SA1211
2SA1211

CHENMKO ENTERPRISE CO.,LTD 2SA1213GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat) =-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. 1.7MAX. 0.4

4.4. 2sa1213y-g.pdf Size:143K _update

2SA1211
2SA1211

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 : Base -Small flat package. 2 : Collector SOT-89-3L 3 : Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25°C unless other

4.5. 2sa1213-y.pdf Size:471K _update

2SA1211
2SA1211

2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors • Small

4.6. 2sa1217.pdf Size:95K _toshiba

2SA1211
2SA1211

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.7. 2sa1213.pdf Size:223K _toshiba

2SA1211
2SA1211

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Maximum Ratings (

4.8. 2sa1210.pdf Size:274K _sanyo

2SA1211
2SA1211

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its

4.9. 2sa1217.pdf Size:201K _jmnic

2SA1211
2SA1211

JMnic Product Specification Silicon PNP Power Transistors 2SA1217 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base

4.10. 2sa1215.pdf Size:203K _jmnic

2SA1211
2SA1211

JMnic Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION ·With MT-200 package ·Complement to type 2SC2921 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VA

4.11. 2sa1216.pdf Size:205K _jmnic

2SA1211
2SA1211

JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION ·With MT-200 package ·Complement to type 2SC2922 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VA

4.12. 2sa1215.pdf Size:27K _sanken-ele

2SA1211

LAPT 2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V IEBO VEB=5V 100max A 0.

4.13. 2sa1216.pdf Size:27K _sanken-ele

2SA1211

LAPT 2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Application : Audio and General Purpose Electrical Characteristics (Ta=25C) External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Symbol Ratings Unit SymboI Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 180 V VCBO VCB=180V 100max A 0.2 24.4 2.1 0.1 VCEO 180 V IEBO VEB=5V 100max

4.14. 2sa1217.pdf Size:190K _inchange_semiconductor

2SA1211
2SA1211

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1217 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounti

4.15. 2sa1215.pdf Size:210K _inchange_semiconductor

2SA1211
2SA1211

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION ·With MT-200 package ·Complement to type 2SC2921 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAME

4.16. 2sa1216.pdf Size:144K _inchange_semiconductor

2SA1211
2SA1211

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

4.17. 2sa1213.pdf Size:183K _htsemi

2SA1211

2SA1 21 3 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEB

4.18. 2sa1213 .pdf Size:520K _willas

2SA1211
2SA1211

2SA1213 -89 Plastic-Encapsulate Transistors SOT TRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package 1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time 3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (Ta=2

4.19. st2sa1213u.pdf Size:688K _semtech

2SA1211
2SA1211

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector C

4.20. 2sa1213.pdf Size:1604K _kexin

2SA1211
2SA1211

SMD Type Transistors PNP Transistors 2SA1213 1.70 0.1 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0us (typ.) Small Flat Package 0.42 0.1 0.46 0.1 PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

Datasheet: 2SA1209S , 2SA1209T , 2SA120A , 2SA121 , 2SA1210 , 2SA1210R , 2SA1210S , 2SA1210T , 2N60 , 2SA1213 , 2SA1214 , 2SA1215 , 2SA1215O , 2SA1215P , 2SA1215Y , 2SA1216 , 2SA1216G .

 


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