2SA143 PDF Specs and Replacements, Transistor Equivalent Finder, Cross Reference

2SA143 PDF Specs and Replacement

   Type Designator: 2SA143
   Material of Transistor: Ge
   Polarity: PNP

Absolute Maximum Ratings

Electrical Characteristics

   Transition Frequency (ft): 6 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO1

2SA143 Substitution

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2SA143 PDF detailed specifications

0.1. Size:261K toshiba
2sa1432.pdf pdf_icon

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0.2. Size:181K toshiba
2sa1430.pdf pdf_icon

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0.3. Size:181K toshiba
2sa1431.pdf pdf_icon

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0.4. Size:132K sanyo
2sa1438.pdf pdf_icon

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0.5. Size:29K sanyo
2sa1435.pdf pdf_icon

Ordering number ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2003B [2SA1435] Features 5.0 4.0 4.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e... See More ⇒

0.6. Size:75K sanyo
2sa1434.pdf pdf_icon

Ordering number EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2018A [2SA1434] Features Very small-sized package permitting 2SA1434-used sets to be made smaller, slimer. Adoption of FBET process. ... See More ⇒

0.7. Size:77K sanyo
2sa1437.pdf pdf_icon

Ordering number EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003A Features [2SA1437] Very small-sized package permitting sets to be made smaller and slimer. Adoption of FBET process. High DC current gain (hFE=400 to 1000). Hig... See More ⇒

0.8. Size:78K sanyo
2sa1433.pdf pdf_icon

Ordering number EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions High fT (Gain-Bandwidth Product). unit mm Small reverse transfer capacitance (Cre=1.3pF). 2006A Adoption of FBET process. [2SA1433] EIAJ SC-51 B Base SANYO MP C Collector E Emitter Specifications Absolute Maximum Ratings ... See More ⇒

0.9. Size:29K sanyo
2sa1436.pdf pdf_icon

Ordering number ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003B Features [2SA1436] Adoption of MBIT process. 5.0 4.0 4.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol... See More ⇒

0.10. Size:732K kexin
2sa1434.pdf pdf_icon

SMD Type or SMD Type TransistICs PNP Transistors 2SA1434 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). 1 2 Low collector-to-emitter saturation voltage +0.1 +0.05 0.95-0.1 0.1 -0.01 (VCE(sat) 0.5V). 1.9+0.1 -0.1 High VEBO (VEBO 15V). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 ... See More ⇒

Detailed specifications: 2SA1427Y , 2SA1428 , 2SA1428O , 2SA1428Y , 2SA1429 , 2SA1429O , 2SA1429Y , 2SA142A , 8050 , 2SA1430 , 2SA1430A , 2SA1430B , 2SA1430C , 2SA1431 , 2SA1431O , 2SA1431Y , 2SA1432 .