2SA143 Datasheet and Replacement

   Type Designator: 2SA143
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.08 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.015 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 6 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO1

2SA143 Substitution

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2SA143 Datasheet (PDF)

0.1. Size:261K toshiba
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2sa1435.pdf pdf_icon

Ordering number:ENN1856APNP Epitaxial Planar Silicon Transistor2SA1435High hFE, AF Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2003B[2SA1435]Features 5.04.04.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e

0.6. Size:75K sanyo
2sa1434.pdf pdf_icon

Ordering number:EN1853APNP Epitaxial Planar Silicon Transistor2SA1434High hFE, Low-FrequencyGeneral-Purpose Amp ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2018A[2SA1434]Features Very small-sized package permitting 2SA1434-usedsets to be made smaller, slimer. Adoption of FBET process.

0.7. Size:77K sanyo
2sa1437.pdf pdf_icon

Ordering number:EN2524APNP Epitaxial Planar Silicon Transistor2SA1437High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003AFeatures[2SA1437] Very small-sized package permitting sets to be madesmaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). Hig

0.8. Size:78K sanyo
2sa1433.pdf pdf_icon

Ordering number:EN3471PNP Epitaxial Planar Silicon Transistor2SA1433High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT (Gain-Bandwidth Product).unit:mm Small reverse transfer capacitance (Cre=1.3pF).2006A Adoption of FBET process.[2SA1433]EIAJ : SC-51 B : BaseSANYO : MP C :CollectorE : EmitterSpecificationsAbsolute Maximum Ratings

0.9. Size:29K sanyo
2sa1436.pdf pdf_icon

Ordering number:ENN2456PNP Epitaxial Planar Silicon Transistor2SA1436High hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003BFeatures[2SA1436] Adoption of MBIT process.5.04.04.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol

0.10. Size:732K kexin
2sa1434.pdf pdf_icon

SMD Type orSMD Type TransistICsPNP Transistors 2SA1434SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High DC current gain (hFE=500 to 1200).1 2Low collector-to-emitter saturation voltage+0.1+0.050.95-0.1 0.1 -0.01(VCE(sat) 0.5V).1.9+0.1-0.1High VEBO (VEBO 15V).1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25

Datasheet: 2SA1427Y , 2SA1428 , 2SA1428O , 2SA1428Y , 2SA1429 , 2SA1429O , 2SA1429Y , 2SA142A , 2SC1815 , 2SA1430 , 2SA1430A , 2SA1430B , 2SA1430C , 2SA1431 , 2SA1431O , 2SA1431Y , 2SA1432 .