All Transistors. 2SA1438 Datasheet

 

2SA1438 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1438

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO92

2SA1438 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1438 Datasheet (PDF)

1.1. 2sa1438.pdf Size:132K _sanyo

2SA1438
2SA1438

4.1. 2sa1431.pdf Size:181K _toshiba

2SA1438
2SA1438

4.2. 2sa1430.pdf Size:181K _toshiba

2SA1438
2SA1438

4.3. 2sa1432.pdf Size:261K _toshiba

2SA1438
2SA1438

4.4. 2sa1437.pdf Size:77K _sanyo

2SA1438
2SA1438

Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit:mm 2003A Features [2SA1437] Very small-sized package permitting sets to be made smaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). High breakd

4.5. 2sa1433.pdf Size:78K _sanyo

2SA1438
2SA1438

Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions High fT (Gain-Bandwidth Product). unit:mm Small reverse transfer capacitance (Cre=1.3pF). 2006A Adoption of FBET process. [2SA1433] EIAJ : SC-51 B : Base SANYO : MP C :Collector E : Emitter Specifications Absolute Maximum Ratings at Ta

4.6. 2sa1434.pdf Size:75K _sanyo

2SA1438
2SA1438

Ordering number:EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit:mm muting circuits. 2018A [2SA1434] Features Very small-sized package permitting 2SA1434-used sets to be made smaller, slimer. Adoption of FBET process. Hig

4.7. 2sa1435.pdf Size:29K _sanyo

2SA1438
2SA1438

Ordering number:ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit:mm muting circuits. 2003B [2SA1435] Features 5.0 4.0 4.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-emitter s

4.8. 2sa1436.pdf Size:29K _sanyo

2SA1438
2SA1438

Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] Adoption of MBIT process. 5.0 4.0 4.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation voltage (V

4.9. 2sa1434.pdf Size:732K _kexin

2SA1438
2SA1438

SMD Type or SMD Type TransistICs PNP Transistors 2SA1434 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). 1 2 Low collector-to-emitter saturation voltage +0.1 +0.05 0.95-0.1 0.1 -0.01 (VCE(sat) 0.5V). 1.9+0.1 -0.1 High VEBO (VEBO 15V). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

Datasheet: 2SA1432 , 2SA1432O , 2SA1432R , 2SA1433 , 2SA1434 , 2SA1435 , 2SA1436 , 2SA1437 , TIP41 , 2SA144 , 2SA1440 , 2SA1441 , 2SA1442 , 2SA1443 , 2SA1444 , 2SA145 , 2SA1450 .

 


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