All Transistors. 2SA1629 Datasheet

 

2SA1629 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1629

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 230 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO236

2SA1629 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1629 Datasheet (PDF)

4.1. 2sa1620.pdf Size:184K _toshiba

2SA1629
2SA1629

2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -300 mA Base current IB -60 mA Co

4.2. 2sa1621.pdf Size:194K _toshiba

2SA1629
2SA1629

2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC4210 Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA

4.3. 2sa1624.pdf Size:128K _sanyo

2SA1629
2SA1629

4.4. 2sa1626.pdf Size:131K _nec

2SA1629
2SA1629

4.5. 2sa1625.pdf Size:194K _nec

2SA1629
2SA1629

4.6. 2sa1627.pdf Size:147K _nec

2SA1629
2SA1629

4.7. 2sa1627a.pdf Size:225K _utc

2SA1629
2SA1629

UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR ? DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. ? FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free

4.8. 2sa1627.pdf Size:97K _utc

2SA1629
2SA1629

UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL VALUE UNIT Co

4.9. 2sa1620.pdf Size:564K _kexin

2SA1629
2SA1629

SMD Type Transistors PNP Transistors 2SA1620 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=-300mA 1 2 ● Collector Emitter Voltage VCEO=-80V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 ● Complementary to 2SC4209 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collect

4.10. 2sa1621.pdf Size:570K _kexin

2SA1629
2SA1629

SMD Type Transistors PNP Transistors 2SA1621 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=-800mA 1 2 ● Collector Emitter Voltage VCEO=-30V +0.05 0.95+0.1 -0.1 0.1 -0.01 ● Complementary to 2SC4210 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

Datasheet: 2SA1621 , 2SA1622 , 2SA1623 , 2SA1624 , 2SA1625 , 2SA1626 , 2SA1627 , 2SA1628 , KT829A , 2SA163 , 2SA1630 , 2SA1633 , 2SA1634 , 2SA1635 , 2SA164 , 2SA1640 , 2SA1641 .

 


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