2SA500O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA500O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO18
2SA500O Transistor Equivalent Substitute - Cross-Reference Search
2SA500O Datasheet (PDF)
2sa496 2sa505.pdf
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vs-fa72sa50lc.pdf
VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for
2sa505.pdf
isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO
Datasheet: 2SA497 , 2SA498 , 2SA499 , 2SA499O , 2SA499R , 2SA499Y , 2SA50 , 2SA500 , TIP142 , 2SA500R , 2SA500Y , 2SA501 , 2SA502 , 2SA503 , 2SA503G , 2SA503O , 2SA503Y .
