All Transistors. 2SA500O Datasheet

 

2SA500O Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA500O

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO18

2SA500O Transistor Equivalent Substitute - Cross-Reference Search

 

2SA500O Datasheet (PDF)

 9.1. Size:756K  1
2sa509.pdf

2SA500O
2SA500O

 9.2. Size:94K  toshiba
2sa496 2sa505.pdf

2SA500O
2SA500O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
vs-fa72sa50lc.pdf

2SA500O
2SA500O

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
2sa505.pdf

2SA500O
2SA500O

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Datasheet: 2SA497 , 2SA498 , 2SA499 , 2SA499O , 2SA499R , 2SA499Y , 2SA50 , 2SA500 , TIP142 , 2SA500R , 2SA500Y , 2SA501 , 2SA502 , 2SA503 , 2SA503G , 2SA503O , 2SA503Y .

 

 
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