All Transistors. 2SA872E Datasheet

 

2SA872E Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA872E

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 3.6 pF

Forward Current Transfer Ratio (hFE), MIN: 800

Noise Figure, dB: -

Package: TO92

2SA872E Transistor Equivalent Substitute - Cross-Reference Search

 

2SA872E Datasheet (PDF)

4.1. 2sa872.pdf Size:37K _hitachi

2SA872E
2SA872E

2SA872, 2SA872A Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC1775/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA872, 2SA872A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA872 2SA872A Unit Collector to base voltage VCBO –90 –120 V Collector to emitter voltage VCEO –90 –120 V Emitter to base voltage VEBO –5

5.1. 2sa879 e.pdf Size:49K _panasonic

2SA872E
2SA872E

Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC1573 5.9± 0.2 4.9± 0.2 Features High collector to emitter voltage VCEO. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V +0.2 +0

5.2. 2sa877 2sa878.pdf Size:148K _jmnic

2SA872E
2SA872E

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute ma

5.3. 2sa877.pdf Size:48K _inchange_semiconductor

2SA872E
2SA872E

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA877 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt

5.4. 2sa877 2sa878.pdf Size:190K _inchange_semiconductor

2SA872E
2SA872E

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Colle

Datasheet: 2SA869 , 2SA87 , 2SA870 , 2SA871 , 2SA872 , 2SA872A , 2SA872C , 2SA872D , 2SC828 , 2SA872F , 2SA873 , 2SA874 , 2SA874M , 2SA876 , 2SA876H , 2SA876HA , 2SA876HB .

 


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