IRFS3107 Datasheet. Specs and Replacement

Type Designator: IRFS3107  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 230 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: D2PAK

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IRFS3107 substitution

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IRFS3107 datasheet

 ..1. Size:371K  international rectifier
 irfs3107pbf irfsl3107pbf.pdf pdf_icon

IRFS3107

PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.5m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 230A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dyn... See More ⇒

 ..2. Size:205K  inchange semiconductor
 irfs3107pbf.pdf pdf_icon

IRFS3107

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS3107PbF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 0.1. Size:322K  international rectifier
 irfs3107-7ppbf.pdf pdf_icon

IRFS3107

IRFS3107-7PPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply max. 2.6m l High Speed Power Switching G l Hard Switched and High Frequency Circuits ID 260A S ID (Package Limited) 240A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized C... See More ⇒

 0.2. Size:694K  infineon
 auirfs3107-7p.pdf pdf_icon

IRFS3107

AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea... See More ⇒

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Detailed specifications: IRFR540Z, IRFR9N20D, IRFS23N15D, IRFS23N20D, IRFS3004, IRFS3004-7P, IRFS3006, IRFS3006-7P, IRF1405, IRFS3107-7P, IRFS31N20D, IRFS3206, IRFS3207, IRFS3207Z, IRFS3306, IRFS3307, IRFS3307Z

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