双极性晶体管datasheet-PDF中文资料大全

 

CXT5401E 参数-双极性晶体管datasheet-PDF中文资料大全

制造商产品编号: CXT5401E

材料 : Si

晶体管极性 : PNP

功耗 (Pd) : 1.2

集电极--基极击穿电压 (Ucb): 250

集电极--发射极击穿电压 (Uce): 220

发射极--基极击穿电压 (Ueb): 7

最大集电极电流 (Ic): 0.6

工作温度最高值 (Tj), °C: 150

最大工作频率 (ft): 100

输出电容 (Cc), pF: 6

直流电流增益 (hfe): 100

晶体管封装类型: SOT89

CXT5401E 相互参照- 代换- 替换

CXT5401E PDF:

1.1. cxt5401e.pdf Size:290K _central

CXT5401E
CXT5401E

CXT5401E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: • High Collector Breakdown Voltage: 250V SOT-89 CASE • Low L

3.1. cxt5401.pdf Size:608K _htsemi

CXT5401E
CXT5401E

CXT5401 TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage 1. BASE Applications such as telephony 1 1 Low current(max. 500mA) High voltage(max.160v) 2 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO

3.2. cxt5401.pdf Size:1165K _kexin

CXT5401E
CXT5401E

SMD Type Transistors PNP Transistors CXT5401 (KXT5401) ■ Features 1.70 0.1 ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 500mA) ● High voltage(max.160v) 0.42 0.1 0.46 0.1 ● Comlementary to CXT5551 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base V

其他晶体管: CS684 , CSA1162 , CSC2712 , CXT3090L , CXT3150 , CXT3410 , CXT3820 , CXT491E , S9018 , CXT5551E , CXT5551HC , CXT591E , CXT7090L , CXT7410 , CXT7820 , RN2609 , CTLM3410-M832D .

 


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