FDD2572 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD2572
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 135 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 29 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 26 nC
   Resistencia entre drenaje y fuente RDS(on): 0.054 Ohm
   Paquete / Cubierta: TO252 DPAK

Búsqueda de reemplazo de MOSFET FDD2572

FDD2572 Datasheet (PDF)

..1. Size:572K fairchild semi
fdd2572 f085.pdf

SNovember 2008FDD2572_F085N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous

..2. Size:247K fairchild semi
fdd2572 fdu2572.pdf

September 2002FDD2572 / FDU2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

..3. Size:580K onsemi
fdd2572 f085.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..4. Size:437K onsemi
fdd2572 fdu2572.pdf

July 2014FDD2572 / FDU2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body DiodeRR High Voltage Synchronous

..5. Size:1436K cn vbsemi
fdd2572.pdf

FDD2572www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSTO

8.1. Size:97K fairchild semi
fdd2570.pdf

February 2001FDD2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 90 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOS

9.1. Size:84K fairchild semi
fdd2512.pdf

August 2001FDD2512150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.7 A, 150 V RDS(ON) = 420 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 470 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. These MOSFETs feature Low g

9.2. Size:268K fairchild semi
fdd2582.pdf

September 2002FDD2582N-Channel PowerTrench MOSFET150V, 21A, 66mFeatures Applications rDS(ON) = 58m (Typ.), VGS = 10V, ID = 7A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifi

9.3. Size:476K onsemi
fdd2582.pdf