FDD2572 PDF and Equivalents Search

S November 2008 FDD2572_F085 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous ... See More ⇒

September 2002 FDD2572 / FDU2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

July 2014 FDD2572 / FDU2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous... See More ⇒

FDD2572 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO... See More ⇒

February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 90 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOS... See More ⇒

August 2001 FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.7 A, 150 V RDS(ON) = 420 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 470 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature Low g... See More ⇒

September 2002 FDD2582 N-Channel PowerTrench MOSFET 150V, 21A, 66m Features Applications rDS(ON) = 58m (Typ.), VGS = 10V, ID = 7A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifi... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒