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BFR90A Specs and Replacement


   Type Designator: BFR90A
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 2500 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO51
 

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BFR90A datasheet

 9.1. Size:76K  motorola
 bfr90rev.pdf pdf_icon

BFR90A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR90/D The RF Line NPN Silicon BFR90 High-Frequency Transistor Designed primarily for use in high gain, low noise, small signal amplifiers. Also used in applications requiring fast switching times. High Current Gain Bandwidth Product fT = 5.0 GHz (Typ) @ IC = 14 mA fT = 5.0 GHz @ 14 mA Low Noise F... See More ⇒

Detailed specifications: BFR88A , BFR88B , BFR88TO5 , BFR89 , BFR89A , BFR89B , BFR89TO5 , BFR90 , C3198 , BFR90B , BFR90H , BFR91 , BFR91A , BFR91H , BFR92 , BFR92A , BFR92ALT1 .

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