BFR90A Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR90A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2500 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO51
BFR90A Transistor Equivalent Substitute - Cross-Reference Search
BFR90A Datasheet (PDF)
9.1. Size:76K motorola
bfr90rev.pdf
bfr90rev.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR90/DThe RF LineNPN SiliconBFR90High-Frequency TransistorDesigned primarily for use in highgain, lownoise, smallsignal amplifiers.Also used in applications requiring fast switching times. High CurrentGain Bandwidth Product fT = 5.0 GHz (Typ) @ IC = 14 mAfT = 5.0 GHz @ 14 mA Low Noise F
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
