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IRF8010 MOSFET (IC) Datasheet. Cross Reference Search. IRF8010 Equivalent

Type Designator: IRF8010

Type of IRF8010 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 260

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), ┬░C:

Rise Time of IRF8010 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.015

Package: TO220AB

IRF8010 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF8010 PDF doc:

1.1. irf8010.pdf Size:494K _international_rectifier

IRF8010
IRF8010

PD - 94497 SMPS MOSFET IRF8010 Applications HEXFET« Power MOSFET High frequency DC-DC converters UPS and Motor Control VDSS RDS(on) max ID Benefits 100V 15m? 80A Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(

See also transistors datasheet: IRF7831 , IRF7832 , IRF7834 , IRF7842 , IRF7853 , IRF7854 , IRF7855 , IRF7862 , STP75NF75 , IRF8010L , IRF8010S , IRF8113 , IRF8113G , IRF8252 , IRF8302M , IRF8304M , IRF8306M .

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 IRF8010 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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