IRF8010 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF8010
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 260 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 80 A
Total Gate Charge (Qg): 81 nC
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO220AB
IRF8010 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF8010 Datasheet (PDF)
0.1. irf8010.pdf 
Size:494K _international_rectifier
PD - 94497 SMPS MOSFET IRF8010 Applications HEXFET® Power MOSFET High frequency DC-DC converters UPS and Motor Control VDSS RDS(on) max ID Benefits 100V 15mΩ 80A Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typica
0.2. irf8010spbf.pdf Size:224K _international_rectifier
PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET® Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15mΩ 80A‡ Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C
0.3. irf8010pbf.pdf Size:133K _international_rectifier
PD - 95505 IRF8010PbF SMPS MOSFET Applications HEXFET® Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15mΩ 80A† Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltag
0.4. irf8010.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF8010，IIRF8010 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB
0.5. irf8010l.pdf Size:256K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF8010L ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100
0.6. irf8010s.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF8010S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
Datasheet: IRF7831 , IRF7832 , IRF7834 , IRF7842 , IRF7853 , IRF7854 , IRF7855 , IRF7862 , STP75NF75 , IRF8010L , IRF8010S , IRF8113 , IRF8113G , IRF8252 , IRF8302M , IRF8304M , IRF8306M .
