IRF8010 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF8010
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 260 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 80 A
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO220AB
IRF8010 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF8010 Datasheet (PDF)
1.1. irf8010pbf.pdf 
Size:133K _upd-mosfet
PD - 95505 IRF8010PbF SMPS MOSFET Applications HEXFET® Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15mΩ 80A†Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltag
1.2. irf8010spbf.pdf Size:224K _upd-mosfet
PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET® Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15mΩ 80A‡ Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C
1.3. irf8010.pdf Size:494K _international_rectifier
PD - 94497 SMPS MOSFET IRF8010 Applications HEXFET® Power MOSFET High frequency DC-DC converters UPS and Motor Control VDSS RDS(on) max ID Benefits 100V 15m? 80A Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(
Datasheet: IRF7831 , IRF7832 , IRF7834 , IRF7842 , IRF7853 , IRF7854 , IRF7855 , IRF7862 , STP75NF75 , IRF8010L , IRF8010S , IRF8113 , IRF8113G , IRF8252 , IRF8302M , IRF8304M , IRF8306M .
