All MOSFET. IRF8010 Datasheet


IRF8010 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF8010

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 260 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 80 A

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO220AB

IRF8010 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF8010 Datasheet (PDF)

1.1. irf8010.pdf Size:494K _international_rectifier


PD - 94497 SMPS MOSFET IRF8010 Applications HEXFET® Power MOSFET High frequency DC-DC converters UPS and Motor Control VDSS RDS(on) max ID Benefits 100V 15m? 80A Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(

Datasheet: IRF7831 , IRF7832 , IRF7834 , IRF7842 , IRF7853 , IRF7854 , IRF7855 , IRF7862 , STP75NF75 , IRF8010L , IRF8010S , IRF8113 , IRF8113G , IRF8252 , IRF8302M , IRF8304M , IRF8306M .

Back to Top





Last Update

MOSFET: PJU8NA50 | PJU7NA65 | PJU7NA60 | PJU6NA70 | PJU6NA40 | PJU5NA80 | PJU5NA50 | PJU4NA90 | PJU4NA70 | PJU4NA65 | PJU4NA60 | PJU3NA80 | PJU3NA50 | PJU2NA70 | PJU2NA60H |



Back to Top