MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
AUIRFP4368 ..BF545A
BF545B ..BLF6G27L-50BN
BLF6G27LS-100 ..BSC109N10NS3G
BSC110N06NS3G ..BSZ105N04NSG
BSZ110N06NS3G ..BUK7515-100A
BUK75150-55A ..BUK9614-30
BUK9614-55 ..C2T225
C2T225A ..CEF14P20
CEF15P15 ..CEP83A3G
CEP840A ..DMG6968UDM
DMG6968UTS ..ECH8674
ECH8675 ..FDB52N20
FDB52N20 ..FDD7N25LZ
FDD8424H ..FDMC86102L
FDMC86102LZ ..FDP150N10A_F102
FDP150N10A_F102 ..FDS5680
FDS5690 ..FK10VS-9
FK14KM-10 ..FQD4N20
FQD4N25 ..FQS4901
FQS4901 ..FRX130D2
FRX130D3 ..H5N2505DL
H5N2505DS ..HAT2092R
HAT2093R ..HUF75337S3S
HUF75339G3 ..IPB038N12N3G
IPB039N04LG ..IPD26N06S2L-35
IPD30N03S2L-07 ..IPI80P03P4L-07
IPI90N04S4-02 ..IPS12CN10LG
IPS135N03LG ..IRF3205Z
IRF3205ZL ..IRF6620
IRF6621 ..IRF7494
IRF7495 ..IRF9633
IRF9640 ..IRFH5301
IRFH5302 ..IRFP233
IRFP240 ..IRFR4615
IRFR4620 ..IRFS9230
IRFS9231 ..IRFY120
IRFY120C ..IRLHS2242
IXFH24N80P ..IXFL34N100
IXFL36N110P ..IXFR18N90P
IXFR200N10P ..IXFX20N120P
IXFX21N100F ..IXTA60N20T
IXTA62N15P ..IXTH60N25
KF3N50FS ..KP103L
KP103M ..MCH6336
MCH6337 ..MTB90P06Q8
MTBA0N10Q8 ..MTN3418S3
MTN3434G6 ..NDB5060L
NDB508A ..NTD4863N
NTD4865N ..NTZD3155C
NTZD5110N ..PMBF4392
PMBF4393 ..PSMN3R0-60PS
RJK0660DPA ..RRH140P03
RRL025P03 ..SDF240
SDF24N50GAF ..SGM2305A
SGM2306A ..SMK1060P
SMK1080FD ..SML60B25
SML60C12 ..SPP15P10PLH
SPP16N50C3 ..SSH40N20
SSH40N20A ..SSM6J215FE
SSM6J21TU ..SST309
SST310 ..STD16NF25
STD17N05 ..STF11N52K3
STF11N65K3 ..STK23N05L
STK23N06L ..STP22NM60N
STP7NA60 ..STW15N50
STW15NA50 ..TK13P25D
TK14A45D ..TPC8027
TPC8028 ..TPCC8076
TPCC8084 ..UT4446
UT45N03 ..ZVN4306G
ZVN4306GV ..ZXMS6006SG
IRFP440 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

IRFP440 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP440

Type of IRFP440 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 8.8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP440 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.85

Package: TO3P

Equivalent transistors for IRFP440

IRFP440 PDF doc:

1.1. irfp440.pdf Size:925K _international_rectifier

PD - 95198 IRFP440PbF • Lead-Free 4/27/04 Document Number: 91228 1 IRFP440PbF Document Number: 91228 2 IRFP440PbF Document Number: 91228 3 IRFP440PbF Document Number: 91228 4 IRFP440PbF Document Number: 91228 5 IRFP440PbF Document Number: 91228 6 IRFP440PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information I I I I I I I I I I I N?te: "P" in assembly line position indicates "Lead-Free" = I Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 04/04 Document Number: 91228 7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Co

1.2. irfp440a.pdf Size:932K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 C) 8.5 ID A o C Continuous Drain Current (TC=100 ) 5.4 IDM Drain Current-Pulsed 1 34 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 602 O IAR Avalanche Current 1 8.5 A O EAR Repetitive Avalanche Energy 1 mJ 16.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC ) 162 W PD Linear Derating Factor W/ oC 1.3 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

1.3. irfp440_sihfp440.pdf Size:1460K _vishay

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power levels S preclude the use of TO-220AB devices. The TO-247AC is D S G similar but superior to the earlier TO-218 package because of N-Channel MOSFET its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety

See also transistors datasheet: IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRF1405 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI .


 IRFP440 Datasheet  IRFP440 Datenblatt  IRFP440 RoHS  IRFP440 Distributor
 IRFP440 Application Notes  IRFP440 Component  IRFP440 Circuit  IRFP440 Schematic
 IRFP440 Equivalent  IRFP440 Cross Reference  IRFP440 Data Sheet  IRFP440 Fiche Technique

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