MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP98T06GP ..APT10088HVR
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
KHB8D8N25P ..KP780V9
KP784A ..MTB35N06ZL
MTB50P03HDL ..NTB35N15
NTB45N06 ..NTP5404N
NTP5863N ..PHP69N03LT
PHP6N10E ..PSMN063-150D
PSMN069-100YS ..RF1K49221
RF1K49223 ..RJK0396DPA
SFS9Z34 ..SMG3401
SMG3402 ..SML50H19
SML50H24 ..SPI08N80C3
SPI11N60C3 ..SSG4910N
SSG4920N ..SSM3K320T
SSM3K329R ..SSQ5N50
SSQ6N60 ..STD10N10L-1
STD10N10LT4 ..STD95N4F3
STI200N6F3 ..STP18N10
STP18N10FI ..STP60N55F3
STP60NF03L ..STV33N10
STV36N06 ..TJ80S04M3L
TJ8S06M3L ..TPC6001
TPC6003 ..TPCA8080
TPCA8081 ..UT2311
UT2312 ..WTL2602
WTL2622 ..ZXMP4A57E6
IRFP440 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

IRFP440 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP440

Type of IRFP440 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 8.8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP440 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.85

Package: TO3P

Equivalent transistors for IRFP440

IRFP440 PDF doc:

1.1. irfp440.pdf Size:925K _international_rectifier

PD - 95198 IRFP440PbF • Lead-Free 4/27/04 Document Number: 91228 1 IRFP440PbF Document Number: 91228 2 IRFP440PbF Document Number: 91228 3 IRFP440PbF Document Number: 91228 4 IRFP440PbF Document Number: 91228 5 IRFP440PbF Document Number: 91228 6 IRFP440PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information I I I I I I I I I I I N?te: "P" in assembly line position indicates "Lead-Free" = I Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 04/04 Document Number: 91228 7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Co

1.2. irfp440a.pdf Size:932K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 C) 8.5 ID A o C Continuous Drain Current (TC=100 ) 5.4 IDM Drain Current-Pulsed 1 34 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 602 O IAR Avalanche Current 1 8.5 A O EAR Repetitive Avalanche Energy 1 mJ 16.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC ) 162 W PD Linear Derating Factor W/ oC 1.3 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

1.3. irfp440_sihfp440.pdf Size:1460K _vishay

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power levels S preclude the use of TO-220AB devices. The TO-247AC is D S G similar but superior to the earlier TO-218 package because of N-Channel MOSFET its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety

See also transistors datasheet: IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRF1405 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI .


 IRFP440 Datasheet  IRFP440 Datenblatt  IRFP440 RoHS  IRFP440 Distributor
 IRFP440 Application Notes  IRFP440 Component  IRFP440 Circuit  IRFP440 Schematic
 IRFP440 Equivalent  IRFP440 Cross Reference  IRFP440 Data Sheet  IRFP440 Fiche Technique

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