MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP03N70I-H
AP03N70I-HF ..AP2326GN-HF
AP2327GN-HF ..AP4432GM
AP4433GM-HF ..AP70L02GH
AP70L02GJ ..AP9565BGM-HF
AP9565GEH ..AP9992GP-A-HF
AP9992GP-HF ..APT60M90JN
AUIRFS3004 ..BF961
BF963 ..BLF7G22L-200
BLF7G22L-250P ..BSC900N20NS3G
BSD223P ..BUK104-50SP
BUK106-50L ..BUK7606-55B
BUK7606-75B ..BUK9675-55A
BUK9775-55 ..CEB12N5
CEB12N6 ..CEK01N6G
CEK01N7 ..CES2323
CES2324 ..DMN2114SN
DMN2170U ..F5031
F5032 ..FDB8832
FDB8832_F085 ..FDD8870_F085
FDD8874 ..FDMS2502SDC
FDP51N25 ..FDS6690A
FDS6690AS ..FK25SM-6
FK30SM-5 ..FQI4N90
FQI50N06 ..FQU2N60C
FQU2N90TU_AM002 ..FSJ260R
FSJ264D ..H5N5016PL
H5N6001P ..HAT2167N
HAT2168H ..HUF75652G3
HUF75842P3 ..IPB100N04S2-04
IPB100N04S2L-03 ..IPD50N06S4-09
IPD50N06S4L-08 ..IPP04N03LBG
IPP052N06L3G ..IPW60R199CP
IPW60R250CP ..IRF3709Z
IRF3709ZCS ..IRF6711S
IRF6712S ..IRF7704G
IRF7705 ..IRF9Z35
IRFB11N50A ..IRFI1010N
IRFI1310N ..IRFP3306
IRFP331 ..IRFS11N50A
IRFS130 ..IRFS9641
IRFS9642 ..IRFZ22
ITF86130SK8T ..IXFH40N30Q
IXFH40N50Q ..IXFM40N30
IXFM42N20 ..IXFR38N80Q2
IXFR40N50Q2 ..IXFX360N15T2
IXFX38N80Q2 ..IXTC110N25T
IXTC13N50 ..IXTH90P10P
KF5N53F ..KP7173A
MKE11R600DCGFC ..MTC4506Q8
MTC5806Q8 ..MTN4N60J3
NDC632P ..NTD6416AN
NTD6416ANL ..NX3008PBK
RFG45N06 ..RJK1526DPF
RJK1526DPJ ..RSJ250P10
RSJ300N10 ..SDF460JED
SGSP382 ..SML1001R1AN
SML1001R1BN ..SML802R8KN
SML8030CFN ..SPW11N80C3
SPW12N50C3 ..SSH9N90A
SSM6K31FE ..STB100NF03L-03
STB100NF04 ..STD25NF10LA
STD26NF10 ..STF20NF20
STL15DN4F5 ..STP30NF20
STW25NM60ND ..TK19J55D
TK1P90A ..TPC8058-H
TPC8059-H ..TPCL4202
TPCL4203 ..UT9564
UT9971P ..ZVP3306F
ZVP3310A ..ZXMS6006SG
IRFP440 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

IRFP440 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP440

Type of IRFP440 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 8.8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP440 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.85

Package: TO3P

Equivalent transistors for IRFP440

IRFP440 PDF doc:

1.1. irfp440.pdf Size:925K _international_rectifier

PD - 95198 IRFP440PbF • Lead-Free 4/27/04 Document Number: 91228 1 IRFP440PbF Document Number: 91228 2 IRFP440PbF Document Number: 91228 3 IRFP440PbF Document Number: 91228 4 IRFP440PbF Document Number: 91228 5 IRFP440PbF Document Number: 91228 6 IRFP440PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information I I I I I I I I I I I N?te: "P" in assembly line position indicates "Lead-Free" = I Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 04/04 Document Number: 91228 7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Co

1.2. irfp440a.pdf Size:932K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 C) 8.5 ID A o C Continuous Drain Current (TC=100 ) 5.4 IDM Drain Current-Pulsed 1 34 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 602 O IAR Avalanche Current 1 8.5 A O EAR Repetitive Avalanche Energy 1 mJ 16.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC ) 162 W PD Linear Derating Factor W/ oC 1.3 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

1.3. irfp440_sihfp440.pdf Size:1460K _vishay

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power levels S preclude the use of TO-220AB devices. The TO-247AC is D S G similar but superior to the earlier TO-218 package because of N-Channel MOSFET its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety

See also transistors datasheet: IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRF1405 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI .


 IRFP440 Datasheet  IRFP440 Datenblatt  IRFP440 RoHS  IRFP440 Distributor
 IRFP440 Application Notes  IRFP440 Component  IRFP440 Circuit  IRFP440 Schematic
 IRFP440 Equivalent  IRFP440 Cross Reference  IRFP440 Data Sheet  IRFP440 Fiche Technique

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