MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCU5N60
FCU900N60Z ..FDD2572
FDD2572_F085 ..FDMB3900AN
FDMB668P ..FDMS86150
FDMS86150A ..FDPF44N25T
FQD2N80 ..FQU2N50B
FQU2N60C ..FSJ260R
FSJ264D ..H7N0310LM
H7N0310LS ..HAT2175H
HAT2175N ..HUF76121SK8
HUF76129D3 ..IPB100N10S3-05
IPB100P03P3L-04 ..IPD530N15N3G
IPD600N25N3G ..IPP062NE7N3G
IPP065N03LG ..IPW65R280E6
IPW65R660CFD ..IRF3709ZS
IRF3710 ..IRF6712S
IRF6713S ..IRF7705
IRF7705G ..IRFB23N15D
IRFB23N20D ..IRFI1310N
IRFI3205 ..IRFP333
IRFP340 ..IRFS132
IRFS133 ..IRFS9643
ITF86130SK8T ..IXFH40N30Q
IXFH40N50Q ..IXFM40N30
IXFM42N20 ..IXFR38N80Q2
IXFR40N50Q2 ..IXFX360N15T2
IXFX38N80Q2 ..IXTC110N25T
IXTC13N50 ..IXTH90P10P
KF5N53F ..KP7173A
MKE11R600DCGFC ..MTC4506Q8
MTC5806Q8 ..MTN4N60FP
MTN4N60I3 ..NDB708A
NDB710A ..NTD6416ANL
NTD70N03R ..NX3008PBKT
RFG50N05L ..RJK1529DPK
RJK1535DPE ..RSJ400N06
RSJ450N04 ..SDF250JAB
SDF26N50 ..SFW9624
SFW9630 ..SMK0765F
SMK0765FJ ..SML601R6KN
SPD15P10PG ..SSG4530C
SSG4536C ..SSM3K16CT
SSM3K16FS ..SSP7462N
SSP7464N ..STB70NFS03L
STB75NF20 ..STD6N10-1
STH12N60 ..STM4470A
STM4470E ..STP22NM60N
STP22NS25Z ..STP75NF68
STP75NF75 ..STT3981
STT3998N ..STW13NK100Z
STW13NK50Z ..TK15A50D
TK15A60D ..TPC8034-H
TPC8035-H ..TPCC8131
TPCC8A01-H ..UT50N03
UT5504 ..ZVN4525E6
ZVN4525G ..ZXMS6006SG
IRFP440 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

IRFP440 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP440

Type of IRFP440 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 8.8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP440 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.85

Package: TO3P

Equivalent transistors for IRFP440

IRFP440 PDF doc:

1.1. irfp440.pdf Size:925K _international_rectifier

PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number: 91228 1 IRFP440PbF Document Number: 91228 2 IRFP440PbF Document Number: 91228 3 IRFP440PbF Document Number: 91228 4 IRFP440PbF Document Number: 91228 5 IRFP440PbF Document Number: 91228 6 IRFP440PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information I I I I I I I I I I I N?te: "P" in assembly line position indicates "Lead-Free" = I Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 04/04 Document Number: 91228 7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifiers Power Co

1.2. irfp440a.pdf Size:932K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 C) 8.5 ID A o C Continuous Drain Current (TC=100 ) 5.4 IDM Drain Current-Pulsed 1 34 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 602 O IAR Avalanche Current 1 8.5 A O EAR Repetitive Avalanche Energy 1 mJ 16.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC ) 162 W PD Linear Derating Factor W/ oC 1.3 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

1.3. irfp440-443_irf840-843.pdf Size:192K _samsung


1.4. irfp440_sihfp440.pdf Size:1460K _vishay

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power levels S preclude the use of TO-220AB devices. The TO-247AC is D S G similar but superior to the earlier TO-218 package because of N-Channel MOSFET its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety

See also transistors datasheet: IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRF1405 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI .


 IRFP440 Datasheet  IRFP440 Datenblatt  IRFP440 RoHS  IRFP440 Distributor
 IRFP440 Application Notes  IRFP440 Component  IRFP440 Circuit  IRFP440 Schematic
 IRFP440 Equivalent  IRFP440 Cross Reference  IRFP440 Data Sheet  IRFP440 Fiche Technique

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