Справочник MOSFET. IRFP440

 

IRFP440 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP440

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 8.8 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 63 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm

Тип корпуса: TO3P

Аналог (замена) для IRFP440

 

 

IRFP440 Datasheet (PDF)

1.1. auirfp4409.pdf Size:373K _international_rectifier

IRFP440
IRFP440

AUTOMOTIVE GRADE AUIRFP4409 HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

1.2. irfp440.pdf Size:925K _international_rectifier

IRFP440
IRFP440

PD - 95198 IRFP440PbF • Lead-Free 4/27/04 Document Number: 91228 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228 www.vishay.com 5 IRFP440PbF Document Number: 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Ou

 1.3. irfp440r irfp441r irfp442r irfp443r.pdf Size:698K _njs

IRFP440
IRFP440



1.4. irfp440a.pdf Size:932K _samsung

IRFP440
IRFP440

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 1.5. irfp440-443 irf840-843.pdf Size:192K _samsung

IRFP440
IRFP440



1.6. irfp440pbf.pdf Size:1449K _vishay

IRFP440
IRFP440

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.85 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Lead (Pb

1.7. irfp440 sihfp440.pdf Size:1460K _vishay

IRFP440
IRFP440

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.85 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Complian

1.8. irfp440a.pdf Size:237K _inchange_semiconductor

IRFP440
IRFP440

isc N-Channel MOSFET Transistor IRFP440A FEATURES ·Drain Current –I = 8.5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.85Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplie

1.9. irfp440r.pdf Size:236K _inchange_semiconductor

IRFP440
IRFP440

isc N-Channel MOSFET Transistor IRFP440R FEATURES ·Drain Current –I = 8A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.85Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

Другие MOSFET... IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRF1405 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI .

 

 
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