MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
J111
  J111
  J111
 
J111
  J111
  J111
 
J111
  J111
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB047N10
FDB050AN06A0 ..FDD6688
FDD6690A ..FDMS2734
FDMS3500 ..FDPF15N65
FDPF16N50 ..FDT86102LZ
FDT86106LZ ..FQD17P06
FQD18N20V2 ..FQU1N60C
FQU1N80 ..FSJ055R
FSJ160D ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75645P3
HUF75645S3S ..IPB083N10N3G
IPB08CNE8NG ..IPD50N04S4-08
IPD50N04S4-10 ..IPP041N12N3G
IPP042N03LG ..IPW60R125C6
IPW60R125CP ..IRF3705
IRF3707Z ..IRF6648
IRF6655 ..IRF7601
IRF7603 ..IRF9Z24N
IRF9Z24NL ..IRFH8334
IRFH8337 ..IRFP254A
IRFP255 ..IRFR9120
IRFR9120N ..IRFS9541
IRFS9542 ..IRFY9120C
IRFY9130 ..IRLI540A
IRLI540N ..IRLZ34NS
IRLZ40 ..IXFH30N50Q3
IXFH30N60P ..IXFM10N90
IXFM11N80 ..IXFR26N50
IXFR26N50Q ..IXFX26N90
IXFX27N80Q ..IXTA86N20T
IXTA88N085T ..IXTH6N90A
IXTH72N20 ..IXTP3N100P
IXTP3N110 ..IXTT82N25P
IXTT88N15 ..KF4N65P
KF4N80F ..KP505G
KP505V ..MCH6604
MCH6613 ..MTC1016S6R
MTC2402Q8 ..MTN3N60I3
MTN3N60J3 ..NDB6060
NDB6060L ..NTD5406N
NTD5407N ..NVD5890N
NVMFD5877NL ..PMBFJ113
PMBFJ210 ..PSMN4R0-25YLC
PSMN4R0-30YL ..RFD3N08L
RFD3N08LSM ..RJK1021DPN
RJK1028DNS ..RSD080P05
RSD100N10 ..SDF15N60GAF
SDF17N60 ..SFU9014
SFU9024 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPD02N60C3
SPD02N60S5 ..SSG4410N
SSG4434N ..SSM3K122TU
SSM3K123TU ..SSP6N70A
SSP6N80A ..STB50N25M5
STB50NF25 ..STD5NK40Z
STD5NK50Z ..STF9NK90Z
STF9NM60N ..STLT20FI
STLT29 ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT3402N
STT3405P ..STV6NA60
STV7NA40 ..TK130F06K3
TK13A25D ..TPC8012-H
TPC8013-H ..TPCC8007
TPCC8008 ..UT40N03
UT40N03T ..ZVN3310F
ZVN3320A ..ZXMS6006SG
 
J111 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

J111 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J111

Type of J111 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 35

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Rise Time of J111 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3

Maximum drain-source on-state resistance (Rds), Ohm: 30

Package: TO92

Equivalent transistors for J111

J111 PDF doc:

1.1. j111_j112_j113_cnv.pdf Size:31K _philips

J111
J111
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.2. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J111
J111
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.3. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J111
J111
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.4. ssm3j111tu.pdf Size:255K _toshiba

J111
J111
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m? (max) (@VGS = -4 V) 1.70.1 Ron = 680m? (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12 V DC ID -1 Drain current A Pulse IDP -2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1: Gate Channel temperature Tch 150 C 2: Source 3: Drain Storage temperature range Tstg -55~150 C UFM Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ? absolute maximum ratings.

1.5. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J111
J111
J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.6. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J111
J111
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.7. j111_j112.pdf Size:85K _onsemi

J111
J111
J111, J112 JFET Chopper Transistors N-Channel Depletion Features http://onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg -65 to +150 C Temperature Range Maximum ratings are those values beyond which device damage can occur. TO-92 Maximum ratings applied to the device are individual stress limit values (not CASE 29-11 normal operating conditions) and are not valid simultaneously. If these limits are 1 STYLE 5 exceeded, device functional operation is not implied, damage may occur and 2 3 reliability may be affected. MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot m

See also transistors datasheet: IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , IRF3710 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 .

Keywords

 J111 Datasheet  J111 Datenblatt  J111 RoHS  J111 Distributor
 J111 Application Notes  J111 Component  J111 Circuit  J111 Schematic
 J111 Equivalent  J111 Cross Reference  J111 Data Sheet  J111 Fiche Technique

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