MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5909
2N5911 ..2N6962
2N6963 ..2SJ135
2SJ136 ..2SJ552
2SJ552L ..2SK1358
2SK1359 ..2SK1904
2SK1916-01R ..2SK2415
2SK2417 ..2SK2885
2SK2886 ..2SK3229
2SK3230B ..2SK371
2SK3710 ..2SK531
2SK532 ..3N60K
3N60Z ..5N80
5N90 ..AO4813
AO4815 ..AOD4124
AOD4126 ..AON6244
AON6246 ..AOT14N50FD
AOT15S60 ..AOWF11C60
AOWF11N60 ..AP18P10GM-HF
AP4034GH-HF ..AP5322GM-HF
AP5331GM-HF ..AP9435GJ
AP9435GK-HF ..AP9965GYT-HF
AUIRF7737L2TR ..BF1201WR
BF1202 ..BLF6G10L-260PRN
BLF6G10L-40BRN ..BRF12N65
BRF13N50 ..BSO080P03NS3G
BSO080P03SH ..BUK446-800A
BUK446-800B ..BUK763R4-30B
BUK763R6-40C ..BUK9MTT-65PBB
BUK9Y07-30B ..CEB6036
CEB6042 ..CEM3307
CEM3317 ..CEU07N65A
CEU08N6A ..DMN3020LK3
DMN3024LK3 ..FCA35N60
FCA36N60NF ..FDB7045L
FDB8030L ..FDD850N10LD
FDD86102 ..FDMD82100L
FDMD8280 ..FDP045N10A
FDP045N10A_F102 ..FDS5672
FDS5680 ..FK7KM-12
FK7SM-12 ..FQP20N06L
FQP22N30 ..FRK9150H
FSL430D ..H7N0308LM
H7N0308LS ..HAT2173N
HAT2174H ..HUF76121D3S
HUF76121P3 ..IPB100N06S2-05
IPB100N06S2L-05 ..IPD50P03P4L-11
IPD50P04P4L-11 ..IPP057N06N3G
IPP057N08N3G ..IPW60R299CP
IPW65R070C6 ..IRF3709S
IRF3709Z ..IRF6708S2
IRF6709S2 ..IRF7702G
IRF7703G ..IRF9Z34NL
IRFHM9331 ..IRFP2907Z
IRFP3077 ..IRFR9222
IRFR9310 ..IRFS9623
IRFS9630 ..IRFY9240C
IXFH340N075T2 ..IXFM13N50
IXFM13N80 ..IXFR30N60P
IXFR32N100P ..IXFX320N17T2
IXFX32N100P ..IXTA90N055T2
IXTA90N075T2 ..IXTH76N25T
IXTT96N20P ..KF3N80I
KF4N20LD ..KP504E
KP504G ..MCH6431
MCH6436 ..MTBA5N10V8
MTBA5Q10Q8 ..MTN351AN3
MTN35N03J3 ..NDB6030
NDB6030L ..NTD4963N
NTD4965N ..NVD5862N
NVD5863NL ..PMBFJ109
PSMN3R7-25YLC ..RFD3055
RFD3055LE ..RJK1008DPE
RJK1008DPN ..RSC002P03
RSD050N06 ..SDF140
SDF150JAA ..SFT1445
SFT1446 ..SMG2391P
SMG2398N ..SML50B26
SML50B30 ..SPB18P06PG
SPB20N60C3 ..SSF7N90A
STD4N25-1 ..STF5NK100Z
STF60N55F3 ..STL26NM60N
STP180N10F3 ..STP5NK65Z
STS8215 ..STU90N4F3
STU95N2LH5 ..TK07H90A
TK09H90A ..TPC6004
TPC6005 ..TPCA8082
TPCA8087 ..UT2312
UT2316 ..WTK9410
WTK9431 ..ZXMP3F36N8
J111 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

J111 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J111

Type of J111 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 35

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Rise Time of J111 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3

Maximum drain-source on-state resistance (Rds), Ohm: 30

Package: TO92

Equivalent transistors for J111 - Cross-Reference Search

J111 PDF doc:

1.1. j111_j112_j113_cnv.pdf Size:31K _philips

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.2. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.3. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.4. ssm3j111tu.pdf Size:255K _toshiba

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m? (max) (@VGS = -4 V) 1.70.1 Ron = 680m? (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12 V DC ID -1 Drain current A Pulse IDP -2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1: Gate Channel temperature Tch 150 C 2: Source 3: Drain Storage temperature range Tstg -55~150 C UFM Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ? absolute maximum ratings.

1.5. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.6. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.7. j111_j112.pdf Size:85K _onsemi

J111, J112 JFET Chopper Transistors N-Channel Depletion Features Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg -65 to +150 C Temperature Range Maximum ratings are those values beyond which device damage can occur. TO-92 Maximum ratings applied to the device are individual stress limit values (not CASE 29-11 normal operating conditions) and are not valid simultaneously. If these limits are 1 STYLE 5 exceeded, device functional operation is not implied, damage may occur and 2 3 reliability may be affected. MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot m

See also transistors datasheet: IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , IRF3710 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 .


 J111 Datasheet  J111 Datenblatt  J111 RoHS  J111 Distributor
 J111 Application Notes  J111 Component  J111 Circuit  J111 Schematic
 J111 Equivalent  J111 Cross Reference  J111 Data Sheet  J111 Fiche Technique


(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages