MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5909
2N5911 ..2N6962
2N6963 ..2SJ133
2SJ134 ..2SJ486
2SJ49 ..2SK1189
2SK1190 ..2SK1526
2SK1527 ..2SK1991
2SK1992 ..2SK2420
2SK2421 ..2SK2795
2SK2796 ..2SK3131
2SK3132 ..2SK3557
2SK3560 ..2SK4126
2SK413 ..2SK981A
2SK982 ..3SK77
3SK77BL ..AO4438
AO4440 ..AOB409L
AOB410L ..AOL1426
AOL1428A ..AON7444
AON7446 ..AOTF454L
AOTF472 ..AP09N70P-H
AP09N70R ..AP2762R-A-HF
AP2762S-A-HF ..AP4525GEH
AP4525GEM-HF ..AP90T03GH
AP90T03GI ..AP9620AGM-HF
AP9620GM-HF ..APT1002RCN
APT10030L2VFR ..APT5017SVR
AUIRL2910S ..BFL4026
BFL4036 ..BLS6G3135-20
BLS6G3135S-120 ..BSC110N06NS3G
BSC118N10NSG ..BSZ110N06NS3G
BSZ120P03NS3EG ..BUK75150-55A
BUK7516-55A ..BUK9614-55
BUK9614-55A ..C2T213
C2T225 ..CEF14N5
CEF14P20 ..CEP83A3
CEP83A3G ..DMG3415U
DMG3415UFY4 ..ECH8420
ECH8601M ..FDB024N06
FDB024N08BL7 ..FDD390N15ALZ
FDMC6296 ..FDMS86252
FDY2000PZ ..FQD2N90
FQD2P40 ..FQU2N60C
FQU2N90 ..FS20KM-5
FS20KM-6 ..H04N60E
H04N60F ..HAT1126R
HAT1126RJ ..HN1K02FU
HN1K03FU ..IPA60R099C6
IPA60R125C6 ..IPB80N06S2L-11
IPB80N06S2L-H5 ..IPI26CN10NG
IPI320N20N3G ..IPP65R280C6
IPP65R280E6 ..IRF1324S-7P
IRF140 ..IRF620FI
IRF620S ..IRF7341Q
IRF7342 ..IRF8707
IRF8707G ..IRFD224
IRFD310 ..IRFL9014
IRFL9110 ..IRFR012
IRFR014 ..IRFS530A
IRFS531 ..IRFU3410
IRFU3411 ..IRL3714Z
IRL3714ZS ..IRLS3034
IRLS3034-7P ..IXFE50N50
IXFE55N50 ..IXFK24N80P
IXFK24N90Q ..IXFN520N075T2
IXFT80N08 ..IXTA160N075T7
IXTA160N085T ..IXTH23N25MA
IXTP05N100 ..IXTQ44P15T
IXTQ450P2 ..IXTZ550N055T2
KSK596 ..MSFA0M02X8
MT3205 ..MTE1K8N25KM3
NDP7050 ..NTLUD3A260P
P0470ATF ..PHP60N06LT
PHP65N06LT ..PSMN057-200P
PSMN059-150Y ..RF1K49086
RF1K49088 ..RJK0380DPA
SDF034JAB-D ..SFI9634
SFI9640 ..SIF4N80C
SIF5N40D ..SML30J130
SML30J70 ..SP632S
SP8005 ..SSD04N65
SSD10N20-400D ..SSF3N80F
SSF4004 ..SSG4542C
SSG4543C ..SSM3K16FU
SSM3K16FV ..SSP7462N
SSP7464N ..STB3N62K3
STD4NK50ZD-1 ..STF7N52K3
STP190N55LF3 ..STP60N06
STP60N06-16 ..STS8DNF3LL
STV270N4F3 ..TK100F06K3
TK10A50D ..TPC6008-H
TPC6009-H ..TPCA8102
TPCA8103 ..UT2955
UT2N10 ..WTL2602
WTL2622 ..ZXMP4A16K
J111 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

J111 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J111

Type of J111 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 35

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Rise Time of J111 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3

Maximum drain-source on-state resistance (Rds), Ohm: 30

Package: TO92

Equivalent transistors for J111 - Cross-Reference Search

J111 PDF doc:

1.1. j111_j112_j113_cnv.pdf Size:31K _philips

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.2. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.3. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.4. ssm3j111tu.pdf Size:255K _toshiba

SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m? (max) (@VGS = -4 V) 1.70.1 Ron = 680m? (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12 V DC ID -1 Drain current A Pulse IDP -2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1: Gate Channel temperature Tch 150 C 2: Source 3: Drain Storage temperature range Tstg -55~150 C UFM Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ? absolute maximum ratings.

1.5. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.6. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.7. j111_j112.pdf Size:85K _onsemi

J111, J112 JFET Chopper Transistors N-Channel Depletion Features Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg -65 to +150 C Temperature Range Maximum ratings are those values beyond which device damage can occur. TO-92 Maximum ratings applied to the device are individual stress limit values (not CASE 29-11 normal operating conditions) and are not valid simultaneously. If these limits are 1 STYLE 5 exceeded, device functional operation is not implied, damage may occur and 2 3 reliability may be affected. MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot m

See also transistors datasheet: IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , IRF3710 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 .


 J111 Datasheet  J111 Datenblatt  J111 RoHS  J111 Distributor
 J111 Application Notes  J111 Component  J111 Circuit  J111 Schematic
 J111 Equivalent  J111 Cross Reference  J111 Data Sheet  J111 Fiche Technique


(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages