MOSFET Datasheet


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J111
  J111
  J111
 
J111
  J111
  J111
 
J111
  J111
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP03N70I-HF
AP03N70J-A-HF ..AP2327GN-HF
AP2328GN-HF ..AP4433GM-HF
AP4434AGH-HF ..AP70L02GJ
AP70L02GP ..AP9565GEH
AP9565GEJ ..AP9992GP-HF
AP9992GR-HF ..APT8015JVFR
APT8015JVR ..AUIRFS3004
AUIRFS3004-7P ..BF963
BF964 ..BLF7G22L-250P
BLF7G22LS-100P ..BSD223P
BSD314SPE ..BUK106-50L
BUK106-50LP ..BUK7606-75B
BUK7607-30B ..BUK9775-55
BUK98150-55 ..CEB12N6
CEB12N65 ..CEK01N7
CEK7002A ..CES2324
CES2331 ..DMN2170U
DMN2215UDM ..F5032
F5033 ..FDB8832_F085
FDB8832_F085 ..FDD8874
FDD8874 ..FDMS2504SDC
FDMS2506SDC ..FDP51N25
FDP52N20 ..FDS6690AS
FDS6690AS ..FK30SM-5
FK30SM-6 ..FQI50N06
FQI5N60C ..FQU2N90TU_AM002
FQU3N50C ..FSJ264D
FSJ264R ..H5N6001P
H6968CTS ..HAT2168H
HAT2168N ..HUF75842P3
HUF75852G3 ..IPB100N04S2L-03
IPB100N04S3-03 ..IPD50N06S4L-08
IPD50N06S4L-12 ..IPP052N06L3G
IPP052NE7N3G ..IPW60R250CP
IPW60R280C6 ..IRF3709ZCS
IRF3709ZL ..IRF6712S
IRF6713S ..IRF7705
IRF7705G ..IRFB11N50A
IRFB23N15D ..IRFI1310N
IRFI3205 ..IRFP331
IRFP332 ..IRFS130
IRFS131 ..IRFS9642
IRFS9643 ..IRFZ22FI
IRFZ24 ..IRLIZ34A
IRLIZ34G ..ITF86130SK8T
ITF86172SK8T ..IXFH40N50Q
IXFH40N50Q2 ..IXFM42N20
IXFM50N20 ..IXFR40N50Q2
IXFR40N90P ..IXFX38N80Q2
IXFX40N90P ..IXTC13N50
IXTC160N10T ..IXTH96N20P
IXTH96N25T ..IXTP4N80P
IXTP50N085T ..IXTU2N80P
IXTU4N60P ..KF5N53F
KF5N53FS ..KP723A
KP723AM ..MKE11R600DCGFC
MLD1N06CL ..MTC5806Q8
MTC8402S6R ..MTN4N65FP
MTN4N65I3 ..NDC632P
NDC651N ..NTD6416ANL
NTD70N03R ..NX3008PBKS
NX3008PBKT ..PMG85XP
PMGD280UN ..PSMN5R8-30LL
PSMN5R8-40YS ..RFG45N06
RFG45N06LE ..RJK1526DPJ
RJK1529DPK ..RSJ300N10
RSJ400N06 ..SDF4N100JAA
SDF4N100JAB ..SGSP382
SGSP461 ..SML1001R1BN
SML1001R1HN ..SML8030CFN
SML8075AN ..SPW12N50C3
SPW15N60C3 ..SSI1N50A
SSI1N60A ..SSM6K31FE
SSM6K32TU ..STB100NF04
STB10NK60Z ..STD26NF10
STD27N3LH5 ..STF20NK50Z
STF20NM60D ..STL15DN4F5
STL15N3LLH5 ..STP30NM30N
STP30NM50N ..STP8NK80ZFP
STP8NM50 ..STW25NM60ND
STW26NM50 ..TK1P90A
TK1Q90A ..TPC8059-H
TPC8060-H ..TPCL4203
TPCM8001-H ..UT9971P
UTC654 ..ZVP3310A
ZVP3310F ..ZXMS6006SG
 
J111 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

J111 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J111

Type of J111 transistor: FET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.35

Maximum drain-source voltage |Uds|, V: 35

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Rise Time of J111 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3

Maximum drain-source on-state resistance (Rds), Ohm: 30

Package: TO92

Equivalent transistors for J111

J111 PDF doc:

1.1. j111_j112_j113_cnv.pdf Size:31K _philips

J111
J111
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.2. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J111
J111
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.3. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J111
J111
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.4. ssm3j111tu.pdf Size:255K _toshiba

J111
J111
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m? (max) (@VGS = -4 V) 1.70.1 Ron = 680m? (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1 3 2 Characteristic Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12 V DC ID -1 Drain current A Pulse IDP -2 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1: Gate Channel temperature Tch 150 C 2: Source 3: Drain Storage temperature range Tstg -55~150 C UFM Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ? absolute maximum ratings.

1.5. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J111
J111
J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.6. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J111
J111
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.7. j111_j112.pdf Size:85K _onsemi

J111
J111
J111, J112 JFET Chopper Transistors N-Channel Depletion Features http://onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above = 25C 2.8 mW/C Lead Temperature TL 300 C Operating and Storage Junction TJ, Tstg -65 to +150 C Temperature Range Maximum ratings are those values beyond which device damage can occur. TO-92 Maximum ratings applied to the device are individual stress limit values (not CASE 29-11 normal operating conditions) and are not valid simultaneously. If these limits are 1 STYLE 5 exceeded, device functional operation is not implied, damage may occur and 2 3 reliability may be affected. MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot m

See also transistors datasheet: IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , IRF3710 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 .

Keywords

 J111 Datasheet  J111 Datenblatt  J111 RoHS  J111 Distributor
 J111 Application Notes  J111 Component  J111 Circuit  J111 Schematic
 J111 Equivalent  J111 Cross Reference  J111 Data Sheet  J111 Fiche Technique

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